SSM6L05FU
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSM6L05FU
Маркировка: K4
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 0.3
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.1
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 0.4
A
Tjⓘ - Максимальная температура канала: 150
°C
Cossⓘ - Выходная емкость: 21
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.8
Ohm
Тип корпуса:
SOT363
SC88
US6
Аналог (замена) для SSM6L05FU
SSM6L05FU
Datasheet (PDF)
..1. Size:179K toshiba
ssm6l05fu.pdf 
SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch Unit: mmHigh Speed Switching Applications Small package Low on resistance Q1: Ron = 0.8 (max) (@VGS = 4 V) Q2: Ron = 3.3 (max) (@VGS = -4 V) Low gate threshold voltage Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrai
8.1. Size:242K toshiba
ssm6l09fu.pdf 
SSM6L09FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type(-MOSVI) SSM6L09FU Power Management Switch High Speed Switching Applications Unit: mm Small package Low on-resistance Q1: RDS(ON) = 0.7 (max) (@VGS = 10 V) Q2: RDS(ON) = 2.7 (max) (@VGS = -10 V) Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source volt
9.1. Size:232K toshiba
ssm6l36tu.pdf 
SSM6L36TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36TU Unit: mm High-Speed Switching Applications 2.10.1 1.70.1 1.5-V drive Low ON-resistance Q1 N-ch: Ron = 1.52 (max) (@VGS = 1.5 V) 1 6 Ron = 1.14 (max) (@VGS = 1.8 V) 2 5 Ron = 0.85 (max) (@VGS = 2.5 V) 3 4Ron = 0.66 (max) (@VGS = 4.5 V) Ron = 0.63 (max) (@VGS =
9.2. Size:233K toshiba
ssm6l13tu.pdf 
SSM6L13TU TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type SSM6L13TU Power Management Switch Applications High-Speed Switching Applications Unit: mm2.10.1 1.8-V drive Nch , Pch 2in1 1.70.1 Low ONresistance: Nch RDS(ON) = 235 m (max) (@VGS = 1.8 V) RDS(ON) = 178 m (max) (@VGS = 2.5 V) : Pch RDS(ON) = 460 m (max) (@
9.3. Size:233K toshiba
ssm6l14fe.pdf 
SSM6L14FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L14FE Power Management Switch Applications High-Speed Switching Applications Unit: mm1.60.05 N-ch: 1.5-V drive P-ch: 1.5-V drive 1.20.05 N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch:RDS(ON) = 330 m (max) (@VGS = 2.5 V) 1 6 RDS(ON) = 240 m (max) (@VGS = 4.5 V) Q2 P-
9.4. Size:222K toshiba
ssm6l36fe.pdf 
SSM6L36FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36FE High-Speed Switching Applications Unit: mm1.60.05 1.5-V drive1.20.05 Low ON-resistance Q1 Nch: Ron = 1.52 (max) (@VGS = 1.5 V) Ron = 1.14 (max) (@VGS = 1.8 V) Ron = 0.85 (max) (@VGS = 2.5 V) 1 6Ron = 0.66 (max) (@VGS = 4.5 V) Ron = 0.63 (max) (@VGS = 5.0 V) 2
9.5. Size:244K toshiba
ssm6l39tu.pdf 
SSM6L39TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L39TU Power Management Switch Applications High-Speed Switching Applications Unit: mm2.10.1 N-ch: 1.5-V drive 1.70.1P-ch: 1.8-V drive N-ch, P-ch, 2-in-1 1 6 Low ON-resistance Q1 N-ch: Ron = 247 m (max) (@VGS = 1.5 V) Ron = 190 m (max) (@VGS = 1.8 V) 2 5Ron = 139 m
9.6. Size:239K toshiba
ssm6l40tu.pdf 
SSM6L40TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L40TU Power Management Switch Applications High-Speed Switching Applications Unit: mm2.10.1 N-ch: 4.0-V drive 1.70.1P-ch: 4.0 -V drive N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch: Ron = 182 m (max) (@VGS = 4 V) 1 6Ron = 122 m (max) (@VGS = 10 V) 2 5 Q2 P-ch: R
9.7. Size:218K toshiba
ssm6l35fe.pdf 
SSM6L35FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FE High-Speed Switching Applications Unit: mm Analog Switch Applications 1.60.051.20.05 N-ch: 1.2-V drive P-ch: 1.2-V drive N-ch, P-ch, 2-in-1 1 6 Low ON-resistance Q1 N-ch: Ron = 20 (max) (@VGS = 1.2 V) 25: Ron = 8 (max) (@VGS = 1.5 V) : Ron = 4 (max) (
9.8. Size:224K toshiba
ssm6l35fu.pdf 
SSM6L35FU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FU High-Speed Switching Applications Unit: mm Analog Switch Applications N-ch: 1.2-V drive P-ch: 1.2-V drive N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch: Ron = 20 (max) (@VGS = 1.2 V) : Ron = 8 (max) (@VGS = 1.5 V) : Ron = 4 (max) (@VGS = 2.5 V) : Ron = 3
9.9. Size:214K toshiba
ssm6l11tu.pdf 
SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications Optimum for high-density mounting in small packages Low ON-resistance Q1: RDS(ON) = 395m (max) (@VGS = 1.8 V) Q2: RDS(ON) = 430m (max) (@VGS = -2.5 V) Unit: mm 2.10.1Q1 Absolute Maximum Ratings (Ta = 25C) 1.70.1Characteristics Symbol Rating U
9.10. Size:209K toshiba
ssm6l10tu.pdf 
SSM6L10TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L10TU High Speed Switching Applications Optimum for high-density mounting in small packages Low on-resistance Q1: Ron = 395m (max) (@VGS = 1.8 V) Unit: mmQ2: Ron = 980m (max) (@VGS = -1.8 V) 2.10.11.70.1Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit1
9.11. Size:204K toshiba
ssm6l16fe.pdf 
SSM6L16FE TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type(-MOSVI) SSM6L16FE High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance Q1: RDS(ON) = 4 (max) (@VGS = 2.5 V) Q2: RDS(ON) = 12 (max) (@VGS = -2.5 V) Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source volta
9.12. Size:233K toshiba
ssm6l12tu.pdf 
SSM6L12TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L12TU High-Speed Switching Applications Optimum for high-density mounting in small packages Low ON-resistance Q1: RDS(ON) = 180m (max) (@VGS = 2.5 V) Unit: mm Q2: RDS(ON) = 430m (max) (@VGS = -2.5 V) 2.10.11.70.1Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating
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