SSM6N15AFE - параметры транзистора MOSFET, его аналоги, datasheet

SSM6N15AFE Datasheet (PDF)

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SSM6N15AFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFE Load Switching Applications Unit: mm1.60.05 2.5 V drive N-ch 2-in-11.20.05 Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4.0 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) 1 6Absolute Maximum Ratings (Ta = 25C) 25(Q1, Q2 Common) 3 4Characteristics Symbol

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SSM6N15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFU Load Switching Applications Unit: mm 2.5 V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4.0 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDSS

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SSM6N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FU High Speed Switching Applications Unit: mmAnalog Switching Applications Small package Low ON resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage V

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SSM6N15FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE High Speed Switching Applications Unit: mmAnalog Switching Applications Small package Low ON resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage V

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