SSM6N24TU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSM6N24TU
Маркировка: NF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1.1 V
Максимально допустимый постоянный ток стока |Id|: 0.5 A
Максимальная температура канала (Tj): 150 °C
Выходная емкость (Cd): 41 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.145 Ohm
Тип корпуса: UF6
SSM6N24TU Datasheet (PDF)
ssm6n24tu.pdf
SSM6N24TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6N24TU High Speed Switching Applications Unit: mm Optimum for high-density mounting in small packages 2.10.1 Low on-resistance: Ron = 145m (max) (@VGS = 4.5 V) 1.70.1Ron = 180m (max) (@VGS = 2.5 V) 1 6Absolute Maximum Ratings (Ta = 25C) 52Characteristics Symbol Rati
ssm6n29tu.pdf
SSM6N29TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N29TU High-Speed Switching Applications 1.8 V drive Unit: mm N-ch 2-in-12.10.1 Low ON-resistance: Ron = 235 m (max) (@VGS = 1.8 V) 1.70.1Ron = 178 m (max) (@VGS = 2.5 V) Ron = 143 m (max) (@VGS = 4.0 V) 1 6Absolute Maximum Ratings (Ta = 25 C) (Q1 , Q2 Common) 52Charac
ssm6n25tu.pdf
SSM6N25TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6N25TU High Speed Switching Applications Unit: mm Optimum for high-density mounting in small packages Low on-resistance: Ron = 395m (max) (@VGS = 1.8 V) 2.10.1Ron = 190m (max) (@VGS = 2.5 V) 1.70.1Ron = 145m (max) (@VGS = 4.0 V) 1 6Absolute Maximum Ratings (Ta = 25C)
ssm6n55nu.pdf
SSM6N55NUMOSFETs Silicon N-Channel MOSSSM6N55NUSSM6N55NUSSM6N55NUSSM6N55NU1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 4.5V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 46 m (max) (@VGS = 10 V) RDS(ON) = 64 m (max) (@VGS
ssm6n15fu.pdf
SSM6N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FU High Speed Switching Applications Unit: mmAnalog Switching Applications Small package Low ON resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage V
ssm6n48fu.pdf
SSM6N48FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6N48FU Load Switching Applications Unit: mm 2.5-V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 3.2 (max) (@VGS = 4.0 V) RDS(ON) = 5.4 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDSS 30
ssm6n16fu.pdf
SSM6N16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N16FU High Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25C)
ssm6n44fe.pdf
SSM6N44FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N44FE High Speed Switching Applications Unit: mmAnalog Switching Applications 1.60.05 Compact package suitable for high-density mounting 1.20.05 Low ON-resistance : RDS(ON) = 4.0 (max) (@VGS = 4 V) : RDS(ON) = 7.0 (max) (@VGS = 2.5 V) 1 6Absolute Maximum Ratings (Ta = 25C) 25
ssm6n15fe.pdf
SSM6N15FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE High Speed Switching Applications Unit: mmAnalog Switching Applications Small package Low ON resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage V
ssm6n7002cfu.pdf
SSM6N7002CFUMOSFETs Silicon N-Channel MOSSSM6N7002CFUSSM6N7002CFUSSM6N7002CFUSSM6N7002CFU1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) Gate-Source diode for protection(2) Low drain-source on-resistance: RDS(ON) = 2.8 (typ.) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 (t
ssm6n40tu.pdf
SSM6N40TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N40TU Power Management Switch Applications Unit: mm2.10.1 High-Speed Switching Applications 1.70.1 4 V drive N-ch 2-in-1 1 6 Low ON-resistance: Ron = 182m (max) (@VGS = 4 V) 2 5Ron = 122m (max) (@VGS = 10 V) 3 4Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common)
ssm6n37ctd.pdf
SSM6N37CTD TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N37CTD Power Management Switch Applications Unit: mm 1.5V drive Top View Low ON-resistance Ron = 5.60 (max) (@VGS = 1.5 V) 1.00.05Ron = 4.05 (max) (@VGS = 1.8 V) 0.150.03Ron = 3.02 (max) (@VGS = 2.5 V) 6 5 4Ron = 2.20 (max) (@VGS = 4.5 V) Absolute Maximum Ratings
ssm6n04fu.pdf
SSM6N04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N04FU High Speed Switch Applications Unit: mm With built-in gate-source resistor: RGS = 1 M (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 common) Characteristics Symbol Rating UnitDrain-source voltag
ssm6n17fu.pdf
SSM6N17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N17FU High Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package High drain-source voltage High speed switching Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltag
ssm6n56fe.pdf
SSM6N56FEMOSFETs Silicon N-Channel MOSSSM6N56FESSM6N56FESSM6N56FESSM6N56FE1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 235 m (max) (@VGS = 4.5 V, ID = 800 mA) RDS(ON) = 300 m (max) (@VGS = 2.5 V, I
ssm6n37fe.pdf
SSM6N37FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N37FE High-Speed Switching Applications : mm Analog Switching Applications 1.60.051.20.05 1.5-V drive Suitable for high-density mounting due to compact package Low ON-resistance RDS(ON) = 5.60 (max) (@VGS = 1.5 V) 1 6RDS(ON) = 4.05 (max) (@VGS = 1.8 V) 2RDS(ON)
ssm6n36fe.pdf
SSM6N36FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N36FE High-Speed Switching Applications Unit: mm 1.5-V drive 1.60.05 Low ON-resistance: Ron = 1.52 (max) (@VGS = 1.5 V) 1.20.05: Ron = 1.14 (max) (@VGS = 1.8 V) : Ron = 0.85 (max) (@VGS = 2.5 V) : Ron = 0.66 (max) (@VGS = 4.5 V) 1 6: Ron = 0.63 (max) (@VGS = 5.0 V
ssm6n58nu.pdf
SSM6N58NUMOSFETs Silicon N-Channel MOSSSM6N58NUSSM6N58NUSSM6N58NUSSM6N58NU1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 1.8-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 84 m (max) (@VGS = 4.5 V) RDS(ON) = 117 m (max) (@V
ssm6n7002fu.pdf
SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 3.3 (max) (@VGS = 4.5 V) : Ron = 3.2 (max) (@VGS = 5 V) : Ron = 3.0 (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol
ssm6n7002bfu.pdf
SSM6N7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM6N7002BFU High-Speed Switching Applications Analog Switch Applications Unit: mm2.10.1 Small package1.250.1 Low ON-resistance : RDS(ON) = 3.3 (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 (max) (@VGS = 5 V) 16: RDS(ON) = 2.1 (max) (@VGS = 10 V) 2 5Absolute Maximum Ratings
ssm6n05fu.pdf
SSM6N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N05FU High Speed Switching Applications Unit: mm Small package Low on resistance : Ron = 0.8 (max) (@VGS = 4 V) : Ron = 1.2 (max) (@VGS = 2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage
ssm6n42fe.pdf
SSM6N42FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N42FE Power Management Switch Applications High-Speed Switching Applications : mm1.60.05 1.5V drive 1.20.05 N-ch 2-in-1 ES6 Low ON-resistance : RDS(ON) = 600 m (max) (@VGS = 1.5V) 1 6: RDS(ON) = 450 m (max) (@VGS = 1.8V) : RDS(ON) = 330 m (max) (@VGS = 2.5V)
ssm6n57nu.pdf
SSM6N57NUMOSFETs Silicon N-Channel MOSSSM6N57NUSSM6N57NUSSM6N57NUSSM6N57NU1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 1.8 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 39.1 m (max) (@VGS = 4.5 V) RDS(ON) = 53 m (max) (@
ssm6n36tu.pdf
SSM6N36TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N36TU High-Speed Switching Applications Unit: mm2.10.1 1.5-V drive 1.70.1 Low ON-resistance: Ron = 1.52 (max) (@VGS = 1.5 V) : Ron = 1.14 (max) (@VGS = 1.8 V) 1 6: Ron = 0.85 (max) (@VGS = 2.5 V) : Ron = 0.66 (max) (@VGS = 4.5 V) 2 5: Ron = 0.63 (max) (@VGS = 5
ssm6n7002bfe.pdf
SSM6N7002BFE TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM6N7002BFE High-Speed Switching Applications Analog Switch Applications Unit: mm1.60.051.20.05 Small package Low ON-resistance : RDS(ON) = 3.3 (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 (max) (@VGS = 5 V) 1 6: RDS(ON) = 2.1 (max) (@VGS = 10 V) 25Absolute Maximum Rating
ssm6n7002kfu.pdf
SSM6N7002KFUMOSFETs Silicon N-Channel MOS (U-MOS-H)SSM6N7002KFUSSM6N7002KFUSSM6N7002KFUSSM6N7002KFU1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) ESD(HBM) level 2 kV(2) Low drain-source on-resistance: RDS(ON) = 1.05 (typ.) (@VGS = 10 V) RDS(ON) = 1.15 (typ.) (@VGS
ssm6n43fu.pdf
SSM6N43FU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N43FU High-Speed Switching Applications Unit: mm 1.5-V drive Low ON-resistance : RDS(ON) = 1.52 (max) (@VGS = 1.5V) : RDS(ON) = 1.14 (max) (@VGS = 1.8V) : RDS(ON) = 0.85 (max) (@VGS = 2.5V) : RDS(ON) = 0.66 (max) (@VGS = 4.5V) : RDS(ON) = 0.63 (max) (@VGS = 5.0V) Absolut
ssm6n09fu.pdf
SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications Unit: mm Small package Low Drain-Source ON resistance. : Ron = 0.7 (max) (@VGS = 10 V) : Ron = 1.2 (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDS 30 VGate-So
ssm6n15afe.pdf
SSM6N15AFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFE Load Switching Applications Unit: mm1.60.05 2.5 V drive N-ch 2-in-11.20.05 Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4.0 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) 1 6Absolute Maximum Ratings (Ta = 25C) 25(Q1, Q2 Common) 3 4Characteristics Symbol
ssm6n15afu.pdf
SSM6N15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFU Load Switching Applications Unit: mm 2.5 V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4.0 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDSS
ssm6n16fe.pdf
SSM6N16FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N16FE High Speed Switching Applications Unit: mmAnalog Switching Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25
ssm6n44fu.pdf
SSM6N44FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N44FU High Speed Switching Applications Unit: mmAnalog Switching Applications Compact package suitable for high-density mounting Low ON-resistance : RDS(ON) = 4.0 (max) (@VGS = 4 V) : RDS(ON) = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characterist
ssm6n39tu.pdf
SSM6N39TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N39TU Power Management Switch Applications Unit: mm High-Speed Switching Applications 2.10.1 1.70.1 1.5-V drive 1 6 N-ch 2-in-1 2 5 Low ON-resistance: Ron = 247m (max) (@VGS = 1.5 V) Ron = 190m (max) (@VGS = 1.8 V) 3 4Ron = 139m (max) (@VGS = 2.5 V) Ron = 119m (
ssm6n35fu.pdf
SSM6N35FU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N35FU Unit: mm High-Speed Switching Applications Analog Switch Applications 1.2-V drive N-ch 2-in-1 Low ON-resistance RDS(ON) = 20 (max) (@VGS = 1.2 V) RDS(ON) = 8 (max) (@VGS = 1.5 V) RDS(ON) = 4 (max) (@VGS = 2.5 V) RDS(ON) = 3 (max) (@VGS = 4.0 V) Absolute Maxi
ssm6n37fu.pdf
SSM6N37FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N37FU High Speed Switching Applications Analog Switch Applications Unit: mm 1.5V drive Low ON-resistance RDS(ON) = 5.60 (max) (@VGS = 1.5 V) RDS(ON) = 4.05 (max) (@VGS = 1.8 V) RDS(ON) = 3.02 (max) (@VGS = 2.5 V) RDS(ON) = 2.20 (max) (@VGS = 4.5 V) Absolute Maximum Ratin
ssm6n35fe.pdf
SSM6N35FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N35FE High-Speed Switching Applications Unit: mm Analog Switch Applications 1.60.051.20.05 1.2-V drive N-ch 2-in-1 1 6 Low ON-resistance: Ron = 20 (max) (@VGS = 1.2 V) 25: Ron = 8 (max) (@VGS = 1.5 V) : Ron = 4 (max) (@VGS = 2.5 V) 3 4: Ron = 3 (max) (@VG
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