SSM6N25TU - описание и поиск аналогов

 ..1. Size:151K  toshiba
 ssm6n25tu.pdf 

SSM6N25TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6N25TU High Speed Switching Applications Unit mm Optimum for high-density mounting in small packages Low on-resistance Ron = 395m (max) (@VGS = 1.8 V) 2.1 0.1 Ron = 190m (max) (@VGS = 2.5 V) 1.7 0.1 Ron = 145m (max) (@VGS = 4.0 V) 1 6 Absolute Maximum Ratings (Ta = 25 C)

 8.1. Size:150K  toshiba
 ssm6n29tu.pdf 

SSM6N29TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N29TU High-Speed Switching Applications 1.8 V drive Unit mm N-ch 2-in-1 2.1 0.1 Low ON-resistance Ron = 235 m (max) (@VGS = 1.8 V) 1.7 0.1 Ron = 178 m (max) (@VGS = 2.5 V) Ron = 143 m (max) (@VGS = 4.0 V) 1 6 Absolute Maximum Ratings (Ta = 25 C) (Q1 , Q2 Common) 5 2 Charac

 8.2. Size:150K  toshiba
 ssm6n24tu.pdf 

SSM6N24TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6N24TU High Speed Switching Applications Unit mm Optimum for high-density mounting in small packages 2.1 0.1 Low on-resistance Ron = 145m (max) (@VGS = 4.5 V) 1.7 0.1 Ron = 180m (max) (@VGS = 2.5 V) 1 6 Absolute Maximum Ratings (Ta = 25 C) 5 2 Characteristics Symbol Rati

 9.1. Size:235K  toshiba
 ssm6n55nu.pdf 

SSM6N55NU MOSFETs Silicon N-Channel MOS SSM6N55NU SSM6N55NU SSM6N55NU SSM6N55NU 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) 4.5V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 46 m (max) (@VGS = 10 V) RDS(ON) = 64 m (max) (@VGS

 9.2. Size:153K  toshiba
 ssm6n15fu.pdf 

SSM6N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FU High Speed Switching Applications Unit mm Analog Switching Applications Small package Low ON resistance Ron = 4.0 (max) (@VGS = 4 V) Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage V

 9.3. Size:176K  toshiba
 ssm6n48fu.pdf 

SSM6N48FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6N48FU Load Switching Applications Unit mm 2.5-V drive N-ch 2-in-1 Low ON-resistance RDS(ON) = 3.2 (max) (@VGS = 4.0 V) RDS(ON) = 5.4 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 30

 9.4. Size:133K  toshiba
 ssm6n16fu.pdf 

SSM6N16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N16FU High Speed Switching Applications Unit mm Analog Switch Applications Suitable for high-density mounting due to compact package Low on resistance Ron = 3.0 (max) (@VGS = 4 V) Ron = 4.0 (max) (@VGS = 2.5 V) Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25 C)

 9.5. Size:147K  toshiba
 ssm6n44fe.pdf 

SSM6N44FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N44FE High Speed Switching Applications Unit mm Analog Switching Applications 1.6 0.05 Compact package suitable for high-density mounting 1.2 0.05 Low ON-resistance RDS(ON) = 4.0 (max) (@VGS = 4 V) RDS(ON) = 7.0 (max) (@VGS = 2.5 V) 1 6 Absolute Maximum Ratings (Ta = 25 C) 2 5

 9.6. Size:184K  toshiba
 ssm6n15fe.pdf 

SSM6N15FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE High Speed Switching Applications Unit mm Analog Switching Applications Small package Low ON resistance Ron = 4.0 (max) (@VGS = 4 V) Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage V

 9.7. Size:210K  toshiba
 ssm6n7002cfu.pdf 

SSM6N7002CFU MOSFETs Silicon N-Channel MOS SSM6N7002CFU SSM6N7002CFU SSM6N7002CFU SSM6N7002CFU 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching 2. Features 2. Features 2. Features 2. Features (1) Gate-Source diode for protection (2) Low drain-source on-resistance RDS(ON) = 2.8 (typ.) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 (t

 9.8. Size:206K  toshiba
 ssm6n40tu.pdf 

SSM6N40TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N40TU Power Management Switch Applications Unit mm 2.1 0.1 High-Speed Switching Applications 1.7 0.1 4 V drive N-ch 2-in-1 1 6 Low ON-resistance Ron = 182m (max) (@VGS = 4 V) 2 5 Ron = 122m (max) (@VGS = 10 V) 3 4 Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common)

 9.9. Size:191K  toshiba
 ssm6n37ctd.pdf 

SSM6N37CTD TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N37CTD Power Management Switch Applications Unit mm 1.5V drive Top View Low ON-resistance Ron = 5.60 (max) (@VGS = 1.5 V) 1.0 0.05 Ron = 4.05 (max) (@VGS = 1.8 V) 0.15 0.03 Ron = 3.02 (max) (@VGS = 2.5 V) 6 5 4 Ron = 2.20 (max) (@VGS = 4.5 V) Absolute Maximum Ratings

 9.10. Size:296K  toshiba
 ssm6n04fu.pdf 

SSM6N04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N04FU High Speed Switch Applications Unit mm With built-in gate-source resistor RGS = 1 M (typ.) 2.5 V gate drive Low gate threshold voltage Vth = 0.7 1.3 V Small package Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 common) Characteristics Symbol Rating Unit Drain-source voltag

 9.11. Size:117K  toshiba
 ssm6n17fu.pdf 

SSM6N17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N17FU High Speed Switching Applications Unit mm Analog Switch Applications Suitable for high-density mounting due to compact package High drain-source voltage High speed switching Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltag

 9.12. Size:199K  toshiba
 ssm6n56fe.pdf 

SSM6N56FE MOSFETs Silicon N-Channel MOS SSM6N56FE SSM6N56FE SSM6N56FE SSM6N56FE 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching 2. Features 2. Features 2. Features 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 235 m (max) (@VGS = 4.5 V, ID = 800 mA) RDS(ON) = 300 m (max) (@VGS = 2.5 V, I

 9.13. Size:190K  toshiba
 ssm6n37fe.pdf 

SSM6N37FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N37FE High-Speed Switching Applications mm Analog Switching Applications 1.6 0.05 1.2 0.05 1.5-V drive Suitable for high-density mounting due to compact package Low ON-resistance RDS(ON) = 5.60 (max) (@VGS = 1.5 V) 1 6 RDS(ON) = 4.05 (max) (@VGS = 1.8 V) 2 RDS(ON)

 9.14. Size:196K  toshiba
 ssm6n36fe.pdf 

SSM6N36FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N36FE High-Speed Switching Applications Unit mm 1.5-V drive 1.6 0.05 Low ON-resistance Ron = 1.52 (max) (@VGS = 1.5 V) 1.2 0.05 Ron = 1.14 (max) (@VGS = 1.8 V) Ron = 0.85 (max) (@VGS = 2.5 V) Ron = 0.66 (max) (@VGS = 4.5 V) 1 6 Ron = 0.63 (max) (@VGS = 5.0 V

 9.15. Size:229K  toshiba
 ssm6n58nu.pdf 

SSM6N58NU MOSFETs Silicon N-Channel MOS SSM6N58NU SSM6N58NU SSM6N58NU SSM6N58NU 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 84 m (max) (@VGS = 4.5 V) RDS(ON) = 117 m (max) (@V

 9.16. Size:172K  toshiba
 ssm6n7002fu.pdf 

SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit mm Small package Low ON resistance Ron = 3.3 (max) (@VGS = 4.5 V) Ron = 3.2 (max) (@VGS = 5 V) Ron = 3.0 (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol

 9.17. Size:179K  toshiba
 ssm6n7002bfu.pdf 

SSM6N7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS ) SSM6N7002BFU High-Speed Switching Applications Analog Switch Applications Unit mm 2.1 0.1 Small package 1.25 0.1 Low ON-resistance RDS(ON) = 3.3 (max) (@VGS = 4.5 V) RDS(ON) = 2.6 (max) (@VGS = 5 V) 1 6 RDS(ON) = 2.1 (max) (@VGS = 10 V) 2 5 Absolute Maximum Ratings

 9.18. Size:130K  toshiba
 ssm6n05fu.pdf 

SSM6N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N05FU High Speed Switching Applications Unit mm Small package Low on resistance Ron = 0.8 (max) (@VGS = 4 V) Ron = 1.2 (max) (@VGS = 2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage

 9.19. Size:187K  toshiba
 ssm6n42fe.pdf 

SSM6N42FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N42FE Power Management Switch Applications High-Speed Switching Applications mm 1.6 0.05 1.5V drive 1.2 0.05 N-ch 2-in-1 ES6 Low ON-resistance RDS(ON) = 600 m (max) (@VGS = 1.5V) 1 6 RDS(ON) = 450 m (max) (@VGS = 1.8V) RDS(ON) = 330 m (max) (@VGS = 2.5V)

 9.20. Size:229K  toshiba
 ssm6n57nu.pdf 

SSM6N57NU MOSFETs Silicon N-Channel MOS SSM6N57NU SSM6N57NU SSM6N57NU SSM6N57NU 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 39.1 m (max) (@VGS = 4.5 V) RDS(ON) = 53 m (max) (@

 9.21. Size:197K  toshiba
 ssm6n36tu.pdf 

SSM6N36TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N36TU High-Speed Switching Applications Unit mm 2.1 0.1 1.5-V drive 1.7 0.1 Low ON-resistance Ron = 1.52 (max) (@VGS = 1.5 V) Ron = 1.14 (max) (@VGS = 1.8 V) 1 6 Ron = 0.85 (max) (@VGS = 2.5 V) Ron = 0.66 (max) (@VGS = 4.5 V) 2 5 Ron = 0.63 (max) (@VGS = 5

 9.22. Size:178K  toshiba
 ssm6n7002bfe.pdf 

SSM6N7002BFE TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS ) SSM6N7002BFE High-Speed Switching Applications Analog Switch Applications Unit mm 1.6 0.05 1.2 0.05 Small package Low ON-resistance RDS(ON) = 3.3 (max) (@VGS = 4.5 V) RDS(ON) = 2.6 (max) (@VGS = 5 V) 1 6 RDS(ON) = 2.1 (max) (@VGS = 10 V) 2 5 Absolute Maximum Rating

 9.23. Size:219K  toshiba
 ssm6n7002kfu.pdf 

SSM6N7002KFU MOSFETs Silicon N-Channel MOS (U-MOS -H) SSM6N7002KFU SSM6N7002KFU SSM6N7002KFU SSM6N7002KFU 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching 2. Features 2. Features 2. Features 2. Features (1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance RDS(ON) = 1.05 (typ.) (@VGS = 10 V) RDS(ON) = 1.15 (typ.) (@VGS

 9.24. Size:201K  toshiba
 ssm6n43fu.pdf 

SSM6N43FU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N43FU High-Speed Switching Applications Unit mm 1.5-V drive Low ON-resistance RDS(ON) = 1.52 (max) (@VGS = 1.5V) RDS(ON) = 1.14 (max) (@VGS = 1.8V) RDS(ON) = 0.85 (max) (@VGS = 2.5V) RDS(ON) = 0.66 (max) (@VGS = 4.5V) RDS(ON) = 0.63 (max) (@VGS = 5.0V) Absolut

 9.25. Size:138K  toshiba
 ssm6n09fu.pdf 

SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications Unit mm Small package Low Drain-Source ON resistance. Ron = 0.7 (max) (@VGS = 10 V) Ron = 1.2 (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-So

 9.26. Size:166K  toshiba
 ssm6n15afe.pdf 

SSM6N15AFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFE Load Switching Applications Unit mm 1.6 0.05 2.5 V drive N-ch 2-in-1 1.2 0.05 Low ON-resistance RDS(ON) = 3.6 (max) (@VGS = 4.0 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) 1 6 Absolute Maximum Ratings (Ta = 25 C) 2 5 (Q1, Q2 Common) 3 4 Characteristics Symbol

 9.27. Size:190K  toshiba
 ssm6n15afu.pdf 

SSM6N15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFU Load Switching Applications Unit mm 2.5 V drive N-ch 2-in-1 Low ON-resistance RDS(ON) = 3.6 (max) (@VGS = 4.0 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDSS

 9.28. Size:132K  toshiba
 ssm6n16fe.pdf 

 9.29. Size:153K  toshiba
 ssm6n44fu.pdf 

SSM6N44FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N44FU High Speed Switching Applications Unit mm Analog Switching Applications Compact package suitable for high-density mounting Low ON-resistance RDS(ON) = 4.0 (max) (@VGS = 4 V) RDS(ON) = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characterist

 9.30. Size:204K  toshiba
 ssm6n39tu.pdf 

SSM6N39TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N39TU Power Management Switch Applications Unit mm High-Speed Switching Applications 2.1 0.1 1.7 0.1 1.5-V drive 1 6 N-ch 2-in-1 2 5 Low ON-resistance Ron = 247m (max) (@VGS = 1.5 V) Ron = 190m (max) (@VGS = 1.8 V) 3 4 Ron = 139m (max) (@VGS = 2.5 V) Ron = 119m (

 9.31. Size:186K  toshiba
 ssm6n35fu.pdf 

SSM6N35FU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N35FU Unit mm High-Speed Switching Applications Analog Switch Applications 1.2-V drive N-ch 2-in-1 Low ON-resistance RDS(ON) = 20 (max) (@VGS = 1.2 V) RDS(ON) = 8 (max) (@VGS = 1.5 V) RDS(ON) = 4 (max) (@VGS = 2.5 V) RDS(ON) = 3 (max) (@VGS = 4.0 V) Absolute Maxi

 9.32. Size:214K  toshiba
 ssm6n37fu.pdf 

SSM6N37FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N37FU High Speed Switching Applications Analog Switch Applications Unit mm 1.5V drive Low ON-resistance RDS(ON) = 5.60 (max) (@VGS = 1.5 V) RDS(ON) = 4.05 (max) (@VGS = 1.8 V) RDS(ON) = 3.02 (max) (@VGS = 2.5 V) RDS(ON) = 2.20 (max) (@VGS = 4.5 V) Absolute Maximum Ratin

 9.33. Size:186K  toshiba
 ssm6n35fe.pdf 

SSM6N35FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N35FE High-Speed Switching Applications Unit mm Analog Switch Applications 1.6 0.05 1.2 0.05 1.2-V drive N-ch 2-in-1 1 6 Low ON-resistance Ron = 20 (max) (@VGS = 1.2 V) 2 5 Ron = 8 (max) (@VGS = 1.5 V) Ron = 4 (max) (@VGS = 2.5 V) 3 4 Ron = 3 (max) (@VG