SSM6N48FU - параметры транзистора MOSFET, его аналоги, datasheet

SSM6N48FU Datasheet (PDF)

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SSM6N48FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6N48FU Load Switching Applications Unit: mm 2.5-V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 3.2 (max) (@VGS = 4.0 V) RDS(ON) = 5.4 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDSS 30

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SSM6N44FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N44FE High Speed Switching Applications Unit: mmAnalog Switching Applications 1.60.05 Compact package suitable for high-density mounting 1.20.05 Low ON-resistance : RDS(ON) = 4.0 (max) (@VGS = 4 V) : RDS(ON) = 7.0 (max) (@VGS = 2.5 V) 1 6Absolute Maximum Ratings (Ta = 25C) 25

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SSM6N40TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N40TU Power Management Switch Applications Unit: mm2.10.1 High-Speed Switching Applications 1.70.1 4 V drive N-ch 2-in-1 1 6 Low ON-resistance: Ron = 182m (max) (@VGS = 4 V) 2 5Ron = 122m (max) (@VGS = 10 V) 3 4Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common)

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ssm6n42fe.pdf pdf_icon

SSM6N42FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N42FE Power Management Switch Applications High-Speed Switching Applications : mm1.60.05 1.5V drive 1.20.05 N-ch 2-in-1 ES6 Low ON-resistance : RDS(ON) = 600 m (max) (@VGS = 1.5V) 1 6: RDS(ON) = 450 m (max) (@VGS = 1.8V) : RDS(ON) = 330 m (max) (@VGS = 2.5V)