SSM6N7002BFE - параметры транзистора MOSFET, его аналоги, datasheet

SSM6N7002BFE Datasheet (PDF)

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SSM6N7002BFE TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM6N7002BFE High-Speed Switching Applications Analog Switch Applications Unit: mm1.60.051.20.05 Small package Low ON-resistance : RDS(ON) = 3.3 (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 (max) (@VGS = 5 V) 1 6: RDS(ON) = 2.1 (max) (@VGS = 10 V) 25Absolute Maximum Rating

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SSM6N7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM6N7002BFU High-Speed Switching Applications Analog Switch Applications Unit: mm2.10.1 Small package1.250.1 Low ON-resistance : RDS(ON) = 3.3 (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 (max) (@VGS = 5 V) 16: RDS(ON) = 2.1 (max) (@VGS = 10 V) 2 5Absolute Maximum Ratings

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SSM6N7002CFUMOSFETs Silicon N-Channel MOSSSM6N7002CFUSSM6N7002CFUSSM6N7002CFUSSM6N7002CFU1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) Gate-Source diode for protection(2) Low drain-source on-resistance: RDS(ON) = 2.8 (typ.) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 (t

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SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 3.3 (max) (@VGS = 4.5 V) : Ron = 3.2 (max) (@VGS = 5 V) : Ron = 3.0 (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol