SSM6P16FE - параметры транзистора MOSFET, его аналоги, datasheet

SSM6P16FE Datasheet (PDF)

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SSM6P16FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM6P16FE High Speed Switching Applications Analog Switch Applications Small package Unit: mm Low on-resistance : R 8 (max) (@VGS 4 V) DS(ON) : R 12 (max) (@VGS 2.5 V) DS(ON): R 45 (max) (@VGS 1.5 V) DS(ON)Absolute Maximum Ratings (Ta = 25

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SSM6P16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM6P16FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Char

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SSM6P15FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P15FE High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDS -30

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SSM6P15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P15FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDS -3

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