SSM6P36FE - параметры транзистора MOSFET, его аналоги, datasheet

SSM6P36FE Datasheet (PDF)

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SSM6P36FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36FE Power Management Switches 1.5-V drive Low ON-resistance: Ron = 3.60 (max) (@VGS = -1.5 V) Unit: mmRon = 2.70 (max) (@VGS = -1.8 V) 1.60.05Ron = 1.60 (max) (@VGS = -2.8 V) Ron = 1.31 (max) (@VGS = -4.5 V) 1.20.05Absolute Maximum Ratings (Ta = 25 C) 1 6(Common t

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SSM6P36TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36TU Power Management Switches 1.5-V drive Unit: mm Low ON-resistance: Ron = 3.60 (max) (@VGS = -1.5 V) 2.10.1: Ron = 2.70 (max) (@VGS = -1.8 V) 1.70.1: Ron = 1.60 (max) (@VGS = -2.8 V) : Ron = 1.31 (max) (@VGS = -4.5 V) 1 6Absolute Maximum Ratings (Ta = 25 C) 2 5

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SSM6P35FU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P35FU High-Speed Switching Applications Unit: mm Analog Switch Applications 1.2-V drive Low ON-resistance : Ron = 44 (max) (@VGS = -1.2 V) : Ron = 22 (max) (@VGS = -1.5 V) : Ron = 11 (max) (@VGS = -2.5 V) : Ron = 8 (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 2

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SSM6P39TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type SSM6P39TU Unit: mm Power Management Switch Applications 2.10.1 High-Speed Switching Applications 1.70.11 6 1.8 V drive 2 5 P-ch 2-in-1 Low ON-resistance: Ron = 430m (max) (@VGS = 1.8 V) 3 4Ron = 294m (max) (@VGS = 2.5 V) Ron = 213m (max) (@VGS = 4.0 V) Abso