Справочник MOSFET. SSM6P36FE

 

SSM6P36FE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM6P36FE
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.15 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.33 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 10.3 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.31 Ohm
   Тип корпуса: SOT563 ES6

 Аналог (замена) для SSM6P36FE

 

 

SSM6P36FE Datasheet (PDF)

 ..1. Size:189K  toshiba
 ssm6p36fe.pdf

SSM6P36FE SSM6P36FE

SSM6P36FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36FE Power Management Switches 1.5-V drive Low ON-resistance: Ron = 3.60 (max) (@VGS = -1.5 V) Unit: mmRon = 2.70 (max) (@VGS = -1.8 V) 1.60.05Ron = 1.60 (max) (@VGS = -2.8 V) Ron = 1.31 (max) (@VGS = -4.5 V) 1.20.05Absolute Maximum Ratings (Ta = 25 C) 1 6(Common t

 7.1. Size:190K  toshiba
 ssm6p36tu.pdf

SSM6P36FE SSM6P36FE

SSM6P36TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36TU Power Management Switches 1.5-V drive Unit: mm Low ON-resistance: Ron = 3.60 (max) (@VGS = -1.5 V) 2.10.1: Ron = 2.70 (max) (@VGS = -1.8 V) 1.70.1: Ron = 1.60 (max) (@VGS = -2.8 V) : Ron = 1.31 (max) (@VGS = -4.5 V) 1 6Absolute Maximum Ratings (Ta = 25 C) 2 5

 8.1. Size:194K  toshiba
 ssm6p35fu.pdf

SSM6P36FE SSM6P36FE

SSM6P35FU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P35FU High-Speed Switching Applications Unit: mm Analog Switch Applications 1.2-V drive Low ON-resistance : Ron = 44 (max) (@VGS = -1.2 V) : Ron = 22 (max) (@VGS = -1.5 V) : Ron = 11 (max) (@VGS = -2.5 V) : Ron = 8 (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 2

 8.2. Size:202K  toshiba
 ssm6p39tu.pdf

SSM6P36FE SSM6P36FE

SSM6P39TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type SSM6P39TU Unit: mm Power Management Switch Applications 2.10.1 High-Speed Switching Applications 1.70.11 6 1.8 V drive 2 5 P-ch 2-in-1 Low ON-resistance: Ron = 430m (max) (@VGS = 1.8 V) 3 4Ron = 294m (max) (@VGS = 2.5 V) Ron = 213m (max) (@VGS = 4.0 V) Abso

 8.3. Size:189K  toshiba
 ssm6p35fe.pdf

SSM6P36FE SSM6P36FE

SSM6P35FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P35FE High-Speed Switching Applications Unit: mm Analog Switch Applications 1.60.051.20.05 1.2-V drive Low ON-resistance : Ron = 44 (max) (@VGS = -1.2 V) : Ron = 22 (max) (@VGS = -1.5 V) 1 6 : Ron = 11 (max) (@VGS = -2.5 V) 25: Ron = 8 (max) (@VGS = -4.0 V) 3

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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