BUK436W-200A - параметры транзистора MOSFET, его аналоги, datasheet

BUK436W-200A Datasheet (PDF)

0.1. Size:54K philips
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Philips Semiconductors Product Specification PowerMOS transistor BUK436W-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK436 -200A -200BThe device is intended for use in VDS Drain-source voltage 200 200 VSwitched Mode Power Supplies ID Drain current (DC) 19 17 A(SMPS),

6.1. Size:53K philips
buk436w-1000b 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK436W-1000B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. VDS Drain-source voltage 1000 VThe device is intended for use in ID Drain current (DC) 3.1 ASwitched Mode Power Supplies Ptot Total power dissipation 125 W(S

6.2. Size:54K philips
buk436w-800a-b 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK436W-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK436 -800A -800BThe device is intended for use in VDS Drain-source voltage 800 800 VSwitched Mode Power Supplies ID Drain current (DC) 4 3.5 A(SMPS),

Другие MOSFET... BUK203-50X , BUK203-50Y , BUK204-50Y , BUK207-50X , BUK207-50Y , BUK426-1000A , BUK426-1000B , BUK436W-1000B , 8205A , BUK436W-200B , BUK436W-800A , BUK436W-800B , BUK438W-800A , BUK438W-800B , BUK444-800A , BUK444-800B , BUK445-200A .