TK14A45D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TK14A45D
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 45 W
Предельно допустимое напряжение сток-исток |Uds|: 450 V
Максимально допустимый постоянный ток стока |Id|: 14 A
Общий заряд затвора (Qg): 38 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.34 Ohm
Тип корпуса: TO220SIS
TK14A45D Datasheet (PDF)
tk14a55d.pdf
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TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK14A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: Yfs = 6.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
tk14a65w5.pdf
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TK14A65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK14A65W5TK14A65W5TK14A65W5TK14A65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.25 (typ.) by using Super Junction Struc
tk14a65w.pdf
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TK14A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK14A65WTK14A65WTK14A65WTK14A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.22 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En
tk14a55d.pdf
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INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK14A55DITK14A55DFEATURESLow drain-source on-resistance:RDS(on) = 0.31 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS
tk14a65w5.pdf
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INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK14A65W5ITK14A65W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.3Easy to control Gate switchingEnhancement mode: Vth = 3.0 to 4.5V (VDS = 10 V, ID=0.69mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulator
tk14a65w.pdf
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INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK14A65WITK14A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.25Easy to control Gate switchingEnhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.69mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: TK16A45D
History: TK16A45D
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Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C