TK15A50D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TK15A50D
Маркировка: K15A50D
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 50 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 15 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 40 nC
Время нарастания (tr): 50 ns
Выходная емкость (Cd): 250 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.3 Ohm
Тип корпуса: TO220SIS
TK15A50D Datasheet (PDF)
tk15a50d.pdf
TK15A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK15A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abs
tk15a50d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK15A50DITK15A50DFEATURESLow drain-source on-resistance:RDS(ON) = 0.24 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS
tk15a20d.pdf
TK15A20DMOSFETs Silicon N-Channel MOS (-MOS)TK15A20DTK15A20DTK15A20DTK15A20D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.12 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 200 V)(3) Enhancement mode: Vth =
tk15a60d.pdf
TK15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK15A60D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth
tk15a60u.pdf
TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK15A60U Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 (typ.) High forward transfer admittance: Yfs = 8.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
tk15a60u.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK15A60U, ITK15A60UFEATURESLow drain-source on-resistance: RDS(ON) = 0.3 (typ.)Low leakage current: IDSS = 100 A (max) (VDS = 600 V)Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID=1 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION
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