Справочник MOSFET. TK16A45D

 

TK16A45D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TK16A45D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 450 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.27 Ohm
   Тип корпуса: TO220SIS

 Аналог (замена) для TK16A45D

 

 

TK16A45D Datasheet (PDF)

 9.1. Size:235K  toshiba
 tk16a55d.pdf

TK16A45D TK16A45D

TK16A55DMOSFETs Silicon N-Channel MOS (-MOS)TK16A55DTK16A55DTK16A55DTK16A55D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.28 (typ.)(2) High forward transfer admittance: |Yfs| = 9.0 S (typ.)(3) Low leakage current: ID

 9.2. Size:243K  toshiba
 tk16a60w5.pdf

TK16A45D TK16A45D

TK16A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK16A60W5TK16A60W5TK16A60W5TK16A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.18 (typ.) by using Super Junction Struc

 9.3. Size:240K  toshiba
 tk16a60w.pdf

TK16A45D TK16A45D

TK16A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK16A60WTK16A60WTK16A60WTK16A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 9.4. Size:253K  inchange semiconductor
 tk16a60w5.pdf

TK16A45D TK16A45D

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK16A60W5,ITK16A60W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.18 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 3.0 to 4.5 V (VDS = 10 V, ID=0.79 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Re

 9.5. Size:253K  inchange semiconductor
 tk16a60w.pdf

TK16A45D TK16A45D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK16A60W, ITK16A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.16 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.79 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regul

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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