TK16A45D. Аналоги и основные параметры

Наименование производителя: TK16A45D

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 450 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.27 Ohm

Тип корпуса: TO220SIS

Аналог (замена) для TK16A45D

- подборⓘ MOSFET транзистора по параметрам

 

TK16A45D даташит

 9.1. Size:235K  toshiba
 tk16a55d.pdf pdf_icon

TK16A45D

TK16A55D MOSFETs Silicon N-Channel MOS ( -MOS ) TK16A55D TK16A55D TK16A55D TK16A55D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.28 (typ.) (2) High forward transfer admittance Yfs = 9.0 S (typ.) (3) Low leakage current ID

 9.2. Size:243K  toshiba
 tk16a60w5.pdf pdf_icon

TK16A45D

TK16A60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK16A60W5 TK16A60W5 TK16A60W5 TK16A60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 100 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.18 (typ.) by using Super Junction Struc

 9.3. Size:240K  toshiba
 tk16a60w.pdf pdf_icon

TK16A45D

TK16A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK16A60W TK16A60W TK16A60W TK16A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.16 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

 9.4. Size:253K  inchange semiconductor
 tk16a60w5.pdf pdf_icon

TK16A45D

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK16A60W5,ITK16A60W5 FEATURES Low drain-source on-resistance RDS(ON) = 0.18 (typ.) Easy to control Gate switching Enhancement mode Vth = 3.0 to 4.5 V (VDS = 10 V, ID=0.79 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Re

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