TK20A60U MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TK20A60U
Маркировка: K20A60U
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 45 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 20 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 27 nC
Время нарастания (tr): 40 ns
Выходная емкость (Cd): 3500 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.19 Ohm
Тип корпуса: TO220SIS
TK20A60U Datasheet (PDF)
tk20a60u.pdf
TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20A60U Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
tk20a60u.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK20A60U, ITK20A60UFEATURESLow drain-source on-resistance: RDS(ON) = 0.165 (typ.)Low leakage current: IDSS = 100A (max) (VDS = 600 V)Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONS
tk20a60w5.pdf
TK20A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK20A60W5TK20A60W5TK20A60W5TK20A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.15 (typ.) by used to Super Junction Str
tk20a60w.pdf
TK20A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20A60WTK20A60WTK20A60WTK20A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.13 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En
tk20a60t.pdf
TK20A60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20A60T Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute M
tk20a60w5.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK20A60W5, ITK20A60W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.15 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 3.0 to 4.5V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regula
tk20a60w.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK20A60W, ITK20A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.155 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulat
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