TK40J60T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TK40J60T
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 400 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 60 ns
Cossⓘ - Выходная емкость: 9200 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
Тип корпуса: SC65 TO3P
TK40J60T Datasheet (PDF)
tk40j60t.pdf
TK40J60T www.DataSheet4U.comTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK40J60T Switching Regulator Applications Unit: mm3.20.2 15.9max. Low drain-source ON resistance: RDS (ON) = 0.068 (typ.) High forward transfer admittance: Yfs = 25 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement-mode: Vth = 3.0
tk40j60u.pdf
TK40J60UMOSFETs Silicon N-Channel MOS (DTMOS)TK40J60UTK40J60UTK40J60UTK40J60U1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.065 (typ.)(2) High forward transfer admittance: |Yfs| = 30 S (typ.)(3) Low leakage current: IDS
tk40j60u.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK40J60UFEATURESLow drain-source on-resistance: RDS(ON) = 0.065 (typ.)Easy to control Gate switchingEnhancement mode: V = 3.0 to 5.0V (VDS = 10 V, ID=1mA)thLow leakage current: I = 100 A (max) (V = 600 V)DSS DS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable
tk40j20d.pdf
TK40J20DMOSFETs Silicon N-Channel MOS (-MOS)TK40J20DTK40J20DTK40J20DTK40J20D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.0374 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 200 V)(3) Enhancement mode: Vth
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918