TK4A50D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TK4A50D
Маркировка: K4A50D
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 9 nC
trⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 45 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
Тип корпуса: TO220SIS
TK4A50D Datasheet (PDF)
tk4a50d.pdf
TK4A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7(typ.) High forward transfer admittance: |Yfs| = 1.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Absolute
tk4a50d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4A50DITK4A50DFEATURESLow drain-source on-resistance:RDS(ON) = 1.7 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T
tk4a55da.pdf
TK4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A55DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth =
tk4a55d.pdf
TK4A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A55D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance: RDS (ON) = 1.5 (typ.) High forward transfer admittance: Yfs = 2.0 S (typ.) Low leakage current : IDSS = 10 A (max) (VDS = 550 V) Enhancement-mode
tk4a53d.pdf
TK4A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A53D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V) Enhancement mode: Vth = 2
tk4a55da.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4A55DAITK4A55DAFEATURESLow drain-source on-resistance:RDS(ON) = 2.0 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING
tk4a55d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4A55DITK4A55DFEATURESLow drain-source on-resistance:RDS(ON) = 1.5 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T
tk4a53d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4A53DITK4A53DFEATURESLow drain-source on-resistance:RDS(ON) = 1.3 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100