TK4A53D - описание и поиск аналогов

 ..1. Size:189K  toshiba
 tk4a53d.pdf 

TK4A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4A53D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.3 (typ.) High forward transfer admittance Yfs = 3.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 525 V) Enhancement mode Vth = 2

 ..2. Size:252K  inchange semiconductor
 tk4a53d.pdf 

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK4A53D ITK4A53D FEATURES Low drain-source on-resistance RDS(ON) = 1.3 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T

 9.1. Size:211K  toshiba
 tk4a50d.pdf 

TK4A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4A50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.7 (typ.) High forward transfer admittance Yfs = 1.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Absolute

 9.2. Size:190K  toshiba
 tk4a55da.pdf 

TK4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4A55DA Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 2.0 (typ.) High forward transfer admittance Yfs = 1.8 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vth =

 9.3. Size:189K  toshiba
 tk4a55d.pdf 

TK4A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4A55D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance RDS (ON) = 1.5 (typ.) High forward transfer admittance Yfs = 2.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement-mode

 9.4. Size:252K  inchange semiconductor
 tk4a50d.pdf 

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK4A50D ITK4A50D FEATURES Low drain-source on-resistance RDS(ON) = 1.7 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T

 9.5. Size:252K  inchange semiconductor
 tk4a55da.pdf 

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK4A55DA ITK4A55DA FEATURES Low drain-source on-resistance RDS(ON) = 2.0 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING

 9.6. Size:252K  inchange semiconductor
 tk4a55d.pdf 

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK4A55D ITK4A55D FEATURES Low drain-source on-resistance RDS(ON) = 1.5 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T