Справочник MOSFET. TK4A53D

 

TK4A53D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TK4A53D
   Маркировка: K4A53D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 525 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 11 nC
   tr ⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 55 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.7 Ohm
   Тип корпуса: TO220SIS
 

 Аналог (замена) для TK4A53D

   - подбор ⓘ MOSFET транзистора по параметрам

 

TK4A53D Datasheet (PDF)

 ..1. Size:189K  toshiba
 tk4a53d.pdf pdf_icon

TK4A53D

TK4A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A53D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V) Enhancement mode: Vth = 2

 ..2. Size:252K  inchange semiconductor
 tk4a53d.pdf pdf_icon

TK4A53D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4A53DITK4A53DFEATURESLow drain-source on-resistance:RDS(ON) = 1.3 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

 9.1. Size:211K  toshiba
 tk4a50d.pdf pdf_icon

TK4A53D

TK4A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7(typ.) High forward transfer admittance: |Yfs| = 1.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Absolute

 9.2. Size:190K  toshiba
 tk4a55da.pdf pdf_icon

TK4A53D

TK4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A55DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth =

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Другие MOSFET... TK40J60U , TK40M60U , TK40P03M1 , TK40P04M1 , TK40S10K3Z , TK40X10J1 , TK45P03M1 , TK4A50D , AO3401 , TK4A55DA , TK4A55D , TK4A60DA , TK4A60DB , TK4A60D , TK4A65DA , TK4P50D , TK4P55DA .

 

 
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