TPC6130 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPC6130
Маркировка: S3P
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2.8 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 5.1 nC
trⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 63 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.106 Ohm
Тип корпуса: SOT6 VS6
TPC6130 Datasheet (PDF)
tpc6130.pdf
TPC6130MOSFETs Silicon P-Channel MOS (U-MOS)TPC6130TPC6130TPC6130TPC61301. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to small and thin package(2) Low drain-source on-resistance: RDS(ON) = 86 m (typ.) (VGS = -4.
tpc6106.pdf
TPC6106 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPC6106 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 58 m (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -40
tpc6110.pdf
TPC6110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC6110 Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 43 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1mA) Abs
tpc6111.pdf
TPC6111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPC6111 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 33 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement mode: Vth = -0.3 to -1.0 V (VDS = -10 V, ID = -1mA) Absolute Maximum Ratings (Ta = 25C)
tpc6105.pdf
TPC6105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6105 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 m (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current : IDSS = -10 A (max) (VDS = -20 V) Enhancement mode : Vth = -0.5 to -1.2 V
tpc6113.pdf
TPC6113 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC6113 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 38 m (typ.) ( VGS = -4.5V) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement mode: Vth
tpc6107.pdf
TPC6107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV) TPC6107 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 40 m (typ.) High forward transfer admittance: |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V)
tpc6109-h.pdf
TPC6109-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6109-H High-Efficiency DC-DC Converter Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 44 m (typ.) (VDS = -10 V) High forward transfer admittance: |Yfs| = 8.0 S (typ.) Low leakage current: IDSS = -1
tpc6108.pdf
TPC6108 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC6108 TENTATIVENotebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 50 m (typ.) DS (ON) High forward transfer admittance: |Y | = 7.4 S (typ.) fs Low leakage cur
tpc6102.pdf
TPC6102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) TPC6102 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 48 m (typ.) High forward transfer admittance: |Yfs| = 6 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS =
tpc6103.pdf
TPC6103 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6103 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 29 m (typ.) High forward transfer admittance: |Yfs| = 13 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -12 V) Enhancement mode: Vth
tpc6104.pdf
TPC6104 PMOS (U-MOSIII) TPC6104 PC : mm : R = 33 m () DS (ON) : |Yfs| = 12 S () :
tpc6101.pdf
TPC6101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) TPC6101 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: R = 48 m (typ.) DS (ON) High forward transfer admittance: |Yfs| = 8.2 S (typ.) Low leakage current: I = -10 A (max) (V = -20 V) DSS DS Enhancement-model: V = -0.5 to -1.2 V
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100