TPC8049-H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TPC8049-H
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 2.8 ns
Cossⓘ - Выходная емкость: 420 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0107 Ohm
Тип корпуса: SOP8
- подбор MOSFET транзистора по параметрам
TPC8049-H Datasheet (PDF)
tpc8049-h.pdf

TPC8049-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8049-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 13 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 6.9 m (typ.) H
tpc8042.pdf

TPC8042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8042 Lithium-Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 2.7 m (typ.) High forward transfer admittance: |Yfs| = 42 S (typ.) Low leakage curr
tpc8047-h.pdf

TPC8047-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8047-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 11 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.1 m (typ.) H
tpc8046-h.pdf

TPC8046-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8046-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 15 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.8 m (typ.) H
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: STU5N60M2 | AP2306CGN-HF | WMM120N04TS | SSM6N48FU | ZXMN6A11ZTA | STF2NK60Z | WMM180N03TS
History: STU5N60M2 | AP2306CGN-HF | WMM120N04TS | SSM6N48FU | ZXMN6A11ZTA | STF2NK60Z | WMM180N03TS



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