TPC8073. Аналоги и основные параметры
Наименование производителя: TPC8073
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 3.4 ns
Cossⓘ - Выходная емкость: 470 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0047 Ohm
Тип корпуса: SOP8
Аналог (замена) для TPC8073
- подборⓘ MOSFET транзистора по параметрам
TPC8073 даташит
tpc8073.pdf
TPC8073 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8073 TPC8073 TPC8073 TPC8073 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 3.8 m
tpc8078.pdf
TPC8078 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8078 TPC8078 TPC8078 TPC8078 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 1.9 m (typ
tpc8074.pdf
TPC8074 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8074 TPC8074 TPC8074 TPC8074 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 5.1 m
tpc8075.pdf
TPC8075 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8075 TPC8075 TPC8075 TPC8075 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 2.1 m (typ
Другие IGBT... TPC8059-H, TPC8061-H, TPC8062-H, TPC8063-H, TPC8064-H, TPC8065-H, TPC8066-H, TPC8067-H, IRFZ46N, TPC8074, TPC8075, TPC8076, TPC8078, TPC8080, TPC8081, TPC8082, TPC8084
History: SSW50R100SFD
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