TPC8092 - описание и поиск аналогов

 ..1. Size:246K  toshiba
 tpc8092.pdf 

TPC8092 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8092 TPC8092 TPC8092 TPC8092 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 7.6 m

 9.1. Size:247K  toshiba
 tpc8066-h.pdf 

TPC8066-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8066-H TPC8066-H TPC8066-H TPC8066-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 3.2 nC (typ.) (4) Lo

 9.2. Size:238K  toshiba
 tpc8084.pdf 

TPC8084 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8084 TPC8084 TPC8084 TPC8084 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 5.4 m (typ

 9.3. Size:185K  toshiba
 tpc8026.pdf 

TPC8026 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 5.1 m (typ.) High forward transfer admittance Yfs = 30 S (typ.) Low leakage curre

 9.4. Size:200K  toshiba
 tpc8042.pdf 

TPC8042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8042 Lithium-Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 2.7 m (typ.) High forward transfer admittance Yfs = 42 S (typ.) Low leakage curr

 9.5. Size:222K  toshiba
 tpc8081.pdf 

TPC8081 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8081 TPC8081 TPC8081 TPC8081 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 2.5 m (typ.) (VGS = 10 V) (3) Low leakage curren

 9.6. Size:509K  toshiba
 tpc8004.pdf 

TPC8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) TPC8004 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance R = 37 m (typ.) DS (ON) High forward transfer admittance Y = 6 S (typ.) fs Low leakage current

 9.7. Size:200K  toshiba
 tpc8053-h.pdf 

TPC8053-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8053-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 6.7 nC (typ.) Low drain-source ON-resistance RDS (ON) = 14.1 m (typ.)

 9.8. Size:208K  toshiba
 tpc8047-h.pdf 

TPC8047-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8047-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 11 nC (typ.) Low drain-source ON-resistance RDS (ON) = 5.1 m (typ.) H

 9.9. Size:79K  toshiba
 tpc8016-h.pdf 

TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8016-H High Speed and High Efficiency DC-DC Converters Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Qg = 48 nc (typ.) Low drain-source ON resistance R = 3.7 m

 9.10. Size:208K  toshiba
 tpc8046-h.pdf 

TPC8046-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8046-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 15 nC (typ.) Low drain-source ON-resistance RDS (ON) = 3.8 m (typ.) H

 9.11. Size:454K  toshiba
 tpc8020-h.pdf 

TPC8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8020-H High-Efficiency DC/DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 6.9 nC (typ.) Low drain-source ON- resistance RD

 9.12. Size:283K  toshiba
 tpc8017-h.pdf 

TPC8017-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPC8017-H High Speed and High Efficiency DC-DC Converters Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Qg = 25 nC (typ.) Low drain-source ON resistance RDS

 9.13. Size:182K  toshiba
 tpc8027.pdf 

TPC8027 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8027 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 2.1 m (typ.) High forward transfer admittance Yfs = 48 S (typ.) Low leakage curre

 9.14. Size:220K  toshiba
 tpc8087.pdf 

TPC8087 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8087 TPC8087 TPC8087 TPC8087 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 1.7 m (typ.) (VGS = 10 V) (3) Low leakage curren

 9.15. Size:223K  toshiba
 tpc8033-h.pdf 

TPC8033-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8033-H High Efficiency DC/DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge QSW = 9.6 nC (typ.) Low drain-source ON-resistance RDS (ON) = 4.0 m (

 9.16. Size:226K  toshiba
 tpc8059-h.pdf 

TPC8059-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8059-H TPC8059-H TPC8059-H TPC8059-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change

 9.17. Size:207K  toshiba
 tpc8050-h.pdf 

TPC8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8050-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 9.2 nC (typ.) Low drain-source ON-resistance RDS (ON) = 9.3 m (typ.)

 9.18. Size:175K  toshiba
 tpc8010-h.pdf 

TPC8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8010-H DC-DC Converters Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Q = 18 nC (typ.) g Low drain-source ON resistance RDS (ON) = 12 m (typ.) High fo

 9.19. Size:225K  toshiba
 tpc8037-h.pdf 

TPC8037-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8037-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 5.0 nC (typ.) Low drain-source ON-resistance RDS (ON) = 7.6 m

 9.20. Size:235K  toshiba
 tpc8032-h.pdf 

 9.21. Size:211K  toshiba
 tpc8021-h.pdf 

TPC8021-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8021-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 3.6 nC (typ.) Low drain-source ON-resistance RDS

 9.22. Size:229K  toshiba
 tpc8064-h.pdf 

TPC8064-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8064-H TPC8064-H TPC8064-H TPC8064-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 5.0 nC (typ.) (4) Lo

 9.23. Size:469K  toshiba
 tpc8018-h.pdf 

TPC8018-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8018-H High-Speed and High-Efficiency DC/DC Converter Unit mm Applications Notebook PC Applications Portable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 12 nC (typ.) Low drain-source ON

 9.24. Size:221K  toshiba
 tpc8085.pdf 

TPC8085 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8085 TPC8085 TPC8085 TPC8085 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 3.8 m

 9.25. Size:268K  toshiba
 tpc8024-h.pdf 

TPC8024-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8024-H High-Efficiency DC DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 6.9 nC (typ.) Low drain-source ON-resistance R

 9.26. Size:250K  toshiba
 tpc8067-h.pdf 

TPC8067-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8067-H TPC8067-H TPC8067-H TPC8067-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 1.9 nC (typ.) (4) Lo

 9.27. Size:194K  toshiba
 tpc8041.pdf 

TPC8041 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8041 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 5.5 m (typ.) High forward transfer admittance Yfs = 26 S (typ.) Low leakage curren

 9.28. Size:222K  toshiba
 tpc8055-h.pdf 

TPC8055-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8055-H TPC8055-H TPC8055-H TPC8055-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change

 9.29. Size:222K  toshiba
 tpc8063-h.pdf 

TPC8063-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8063-H TPC8063-H TPC8063-H TPC8063-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change

 9.30. Size:241K  toshiba
 tpc8014.pdf 

TPC8014 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8014 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 11 m (typ.) High forward transfer admittance Yfs = 10 S (typ.) Low leakage curre

 9.31. Size:235K  toshiba
 tpc8078.pdf 

TPC8078 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8078 TPC8078 TPC8078 TPC8078 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 1.9 m (typ

 9.32. Size:219K  toshiba
 tpc8025.pdf 

TPC8025 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8025 Lithium-Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 7.5 m (typ.) High forward transfer admittance Yfs = 26 S (typ.) Low leakage cur

 9.33. Size:336K  toshiba
 tpc8001.pdf 

TPC8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) TPC8001 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance R = 15 m (typ.) DS (ON) High forward transfer admittance Y = 11 S (typ.) fs Low leakage current

 9.34. Size:180K  toshiba
 tpc8013-h.pdf 

TPC8013-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8013-H High Speed and High Efficiency DC-DC Converters Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Qg = 48 nc (typ.) Low drain-source ON resistance RDS (ON)

 9.35. Size:257K  toshiba
 tpc8065-h.pdf 

TPC8065-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8065-H TPC8065-H TPC8065-H TPC8065-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 4.3 nC (typ.) (4) Lo

 9.36. Size:221K  toshiba
 tpc8022-h.pdf 

TPC8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS III) TPC8022-H High-Efficiency DC/DC Converter Applications Unit mm Notebook PC Applications Portable-Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Small gate charge QSW = 3.5 nC (typ.) Low drain-so

 9.37. Size:226K  toshiba
 tpc8038-h.pdf 

TPC8038-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8038-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 5.0 nC (typ.) Low drain-source ON-resistance RDS (ON) = 7.6 m

 9.38. Size:227K  toshiba
 tpc8086.pdf 

TPC8086 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8086 TPC8086 TPC8086 TPC8086 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 5.0 m

 9.39. Size:257K  toshiba
 tpc8089-h.pdf 

TPC8089-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8089-H TPC8089-H TPC8089-H TPC8089-H 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators Motor Drivers DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 3.6 nC (typ.) (3) Low drain-source on-resistanc

 9.40. Size:218K  toshiba
 tpc8060-h.pdf 

TPC8060-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8060-H High Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 16 nC (typ.) Low drain-source ON-resistance RDS (ON) = 3.1 m

 9.41. Size:223K  toshiba
 tpc8034-h.pdf 

 9.42. Size:295K  toshiba
 tpc8006-h.pdf 

 9.43. Size:288K  toshiba
 tpc8030.pdf 

TPC8030 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8030 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 7.5 m (typ.) High forward transfer admittance Yfs = 26 S (typ.) Low leakage curren

 9.44. Size:212K  toshiba
 tpc8052-h.pdf 

TPC8052-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8052-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 6.6 nC (typ.) Low drain-source ON-resistance RDS (ON) = 7.4 m (typ.)

 9.45. Size:230K  toshiba
 tpc8031-h.pdf 

 9.46. Size:208K  toshiba
 tpc8049-h.pdf 

TPC8049-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8049-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 13 nC (typ.) Low drain-source ON-resistance RDS (ON) = 6.9 m (typ.) H

 9.47. Size:216K  toshiba
 tpc8061-h.pdf 

 9.48. Size:223K  toshiba
 tpc8062-h.pdf 

TPC8062-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8062-H TPC8062-H TPC8062-H TPC8062-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change

 9.49. Size:125K  toshiba
 tpc8012-h.pdf 

TPC8012-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV) TPC8012-H Switching Regulator Application Unit mm DC-DC Converters Low drain-source ON resistance RDS (ON) = 0.28 (typ.) High forward transfer admittance Y = 1.35 S (typ.) fs Low leakage current I = 100 A (max) (V = 200 V) DSS DS Enhancement mode Vth = 3.0 to 5.0 V (VD

 9.50. Size:222K  toshiba
 tpc8080.pdf 

TPC8080 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8080 TPC8080 TPC8080 TPC8080 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 2.2 m (typ.) (VGS = 10 V) (3) Low leakage curren

 9.51. Size:224K  toshiba
 tpc8036-h.pdf 

TPC8036-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8036-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge Q = 13 nC (typ.) SW Low drain-source ON-resistance R = 3.1 m (typ.

 9.52. Size:206K  toshiba
 tpc8051-h.pdf 

TPC8051-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8051-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 16 nC (typ.) Low drain-source ON-resistance RDS (ON) = 6.3 m (typ.) H

 9.53. Size:220K  toshiba
 tpc8088.pdf 

TPC8088 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8088 TPC8088 TPC8088 TPC8088 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 1.9 m (typ.) (VGS = 10 V) (3) Low leakage curren

 9.54. Size:235K  toshiba
 tpc8040-h.pdf 

 9.55. Size:223K  toshiba
 tpc8074.pdf 

TPC8074 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8074 TPC8074 TPC8074 TPC8074 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 5.1 m

 9.56. Size:183K  toshiba
 tpc8029.pdf 

TPC8029 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8029 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 2.9 m (typ.) High forward transfer admittance Yfs = 40 S (typ.) Low leakage curre

 9.57. Size:217K  toshiba
 tpc8035-h.pdf 

TPC8035-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8035-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge Q = 17 nC (typ.) SW Low drain-source ON-resistance R = 2.3 m (typ.)

 9.58. Size:221K  toshiba
 tpc8039-h.pdf 

TPC8039-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8039-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge Q = 8.6 nC (typ.) SW Low drain-source ON-resistance R = 4.1 m (typ

 9.59. Size:330K  toshiba
 tpc8003.pdf 

TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Unit mm Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance R = 5.4 m (typ.) DS (ON) High forward transfer admittance Y = 21 S (typ.) fs Low leakage current

 9.60. Size:182K  toshiba
 tpc8009-h.pdf 

 9.61. Size:234K  toshiba
 tpc8075.pdf 

TPC8075 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8075 TPC8075 TPC8075 TPC8075 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 2.1 m (typ

 9.62. Size:272K  toshiba
 tpc8028.pdf 

TPC8028 N MOS (U-MOS ) TPC8028 mm PC RDS (ON) = 3.5m ( ) Yfs = 40 S (

 9.63. Size:235K  toshiba
 tpc8076.pdf 

TPC8076 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8076 TPC8076 TPC8076 TPC8076 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 3.9 m (typ

 9.64. Size:223K  toshiba
 tpc8056-h.pdf 

TPC8056-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8056-H TPC8056-H TPC8056-H TPC8056-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change

 9.65. Size:206K  toshiba
 tpc8048-h.pdf 

TPC8048-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8048-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 17 nC (typ.) Low drain-source ON-resistance RDS (ON) = 4.6 m (typ.) H

 9.66. Size:225K  toshiba
 tpc8057-h.pdf 

TPC8057-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8057-H TPC8057-H TPC8057-H TPC8057-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change

 9.67. Size:224K  toshiba
 tpc8058-h.pdf 

TPC8058-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8058-H TPC8058-H TPC8058-H TPC8058-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change

 9.68. Size:227K  toshiba
 tpc8073.pdf 

TPC8073 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8073 TPC8073 TPC8073 TPC8073 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 3.8 m

 9.69. Size:224K  toshiba
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TPC8082 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8082 TPC8082 TPC8082 TPC8082 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 3.1 m (typ.) (VGS = 10 V) (3) Low leakage curren

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 tpc8045-h.pdf 

TPC8045-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8045-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 23 nC (typ.) Low drain-source ON-resistance RDS (ON) = 2.7 m (typ.) H

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 tpc8018-h.pdf 

TPC8018-H www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

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TPC8028 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO

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TPP80R300C, TPA80R300C, TPV80R300C, TPC80R300C, TPB80R300C Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Informatio

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TPA80R750C, TPB80R750C, TPC80R750C, TPD80R750C, TPP80R750C, TPU80R750C Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package