Справочник MOSFET. TPC8221-H

 

TPC8221-H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TPC8221-H
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 6.2 nC
   trⓘ - Время нарастания: 2.8 ns
   Cossⓘ - Выходная емкость: 190 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для TPC8221-H

 

 

TPC8221-H Datasheet (PDF)

 ..1. Size:388K  toshiba
 tpc8221-h.pdf

TPC8221-H TPC8221-H

TPC8221-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8221-HTPC8221-HTPC8221-HTPC8221-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate change: QSW = 3.5 nC (typ.)(4) Lo

 8.1. Size:259K  toshiba
 tpc8224-h.pdf

TPC8221-H TPC8221-H

TPC8224-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8224-HTPC8224-HTPC8224-HTPC8224-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate change: QSW = 1.9 nC (typ.)(4) Lo

 8.2. Size:257K  toshiba
 tpc8227-h.pdf

TPC8221-H TPC8221-H

TPC8227-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8227-HTPC8227-HTPC8227-HTPC8227-H1. Applications1. Applications1. Applications1. Applications DC-DC Converters CCFL Inverters2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 2.4 nC (typ.)(4) Low drain-source on-resistance: RDS(O

 8.3. Size:255K  toshiba
 tpc8223-h.pdf

TPC8221-H TPC8221-H

TPC8223-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8223-HTPC8223-HTPC8223-HTPC8223-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate change: QSW = 3.6 nC (typ.)(4) Lo

 8.4. Size:254K  toshiba
 tpc8228-h.pdf

TPC8221-H TPC8221-H

TPC8228-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8228-HTPC8228-HTPC8228-HTPC8228-H1. Applications1. Applications1. Applications1. Applications DC-DC Converters CCFL Inverters2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 2.6 nC (typ.)(4) Low drain-source on-resistance: RDS(O

 8.5. Size:256K  toshiba
 tpc8229-h.pdf

TPC8221-H TPC8221-H

TPC8229-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8229-HTPC8229-HTPC8229-HTPC8229-H1. Applications1. Applications1. Applications1. Applications DC-DC Converters CCFL Inverters2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 2.4 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 53 m (typ.)(4)

 8.6. Size:872K  cn vbsemi
 tpc8223-h.pdf

TPC8221-H TPC8221-H

TPC8223-Hwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.010 at VGS = 10 V 1230 5.9 nC Optimized for High-Side Synchronous0.012 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

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