TPC8407 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TPC8407
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 0.45 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 17 nC
trⓘ - Время нарастания: 2.1 ns
Cossⓘ - Выходная емкость: 210 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
Тип корпуса: SOP8
- подбор MOSFET транзистора по параметрам
TPC8407 Datasheet (PDF)
tpc8407.pdf

TPC8407MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)TPC8407TPC8407TPC8407TPC84071. Applications1. Applications1. Applications1. Applications Motor Drivers CCFL Inverters Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High speed switching(3) Low drain-source on-resistance
tpc8406-h.pdf

TPC8406-H TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type (P-ChannelN-Channel Ultra-High-Speed U-MOSIII) TPC8406-H High Efficiency DCDC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Low drain-source ON-resi
tpc8401.pdf

TPC8401 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII) TPC8401 Lithium Ion Secondary Battery Applications Portable Equipment Applications Unit: mmNotebook PCs Low drain-source ON resistance : P Channel RDS (ON) = 27 m (typ.) N Channel R = 14 m (typ.) DS (ON) High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel
tpc8404.pdf

TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (P Channel -MOSV/N Channel -MOSV) TPC8404 Motor Dreive Unit: mmSwitching Regulator Applications Low drain-source ON resistance: P Channel RDS (ON) = 1.85 (typ.) N Channel RDS (ON) = 1.2 (typ.) High forward transfer admittance: P Channel |Yfs| = 1.1 S (typ.) N Channel |Yfs| = 1.3 S (ty
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BRCS2N65AA | 2SK2655-01R
History: BRCS2N65AA | 2SK2655-01R



Список транзисторов
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