TPC8A06-H - аналоги и даташиты транзистора

 

TPC8A06-H - Даташиты. Аналоги. Основные параметры


   Наименование производителя: TPC8A06-H
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 2.4 ns
   Cossⓘ - Выходная емкость: 380 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0101 Ohm
   Тип корпуса: SOP8
 

 Аналог (замена) для TPC8A06-H

   - подбор ⓘ MOSFET транзистора по параметрам

 

TPC8A06-H Datasheet (PDF)

 ..1. Size:234K  toshiba
 tpc8a06-h.pdf pdf_icon

TPC8A06-H

TPC8A06-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A06-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Built-in schottky barrier diode Low forward voltage: V = 0.6 V (max) DSF High-speed switching Small gate charge: QSW = 4.5

 8.1. Size:279K  toshiba
 tpc8a07-h.pdf pdf_icon

TPC8A06-H

TPC8A07-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V -H) TPC8A07-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: (Q1) QSW = 3.4 nC (typ.) (Q2) QSW =

 8.2. Size:316K  toshiba
 tpc8a01.pdf pdf_icon

TPC8A06-H

TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(UMOS) Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(UMOS) TPC8A01 Unit: mmDC-DC CONVERTER Notebook PC Portable Machines and Tools Includes Schottky Barrier Diode Type. (Q2) Low Forward Voltage: V =0.6V(Max.) DSF Small footprint due to

 8.3. Size:217K  toshiba
 tpc8a04-h.pdf pdf_icon

TPC8A06-H

TPC8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A04-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications Built-in schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 13 nC (ty

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... TPC8221-H , TPC8223-H , TPC8224-H , TPC8407 , TPC8408 , TPC8A03-H , TPC8A04-H , TPC8A05-H , IRFB4227 , TPCA8006-H , TPCA8008-H , TPCA8010-H , TPCA8011-H , TPCA8024 , TPCA8025 , TPCA8026 , TPCA8042 .

History: UT60N03L-TND-R

 

 
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