BUK466-200A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK466-200A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tjⓘ - Максимальная температура канала: 150 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
Тип корпуса: SOT404
Аналог (замена) для BUK466-200A
BUK466-200A Datasheet (PDF)
buk466-200a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK466-200AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for use in surface VDS Drain-source voltage 200 Vmount applications. ID Drain current (DC) 19 AThe device is intended for use in Ptot Total power dissipat
buk466-60a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK466-60AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 60 Vapplications. ID Drain current (DC) 52 AThe device is intended for use in Ptot Total power dissipation 150 W
buk466-100a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK466-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 100 Vapplications. ID Drain current (DC) 34 AThe device is intended for use in Ptot Total power dissipation 150
buk462-100a 2.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK462-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 100 Vapplications. ID Drain current (DC) 11 AThe device is intended for use in Ptot Total power dissipation 60
buk463-60a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK463-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK463 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain current (DC) 22 20 A(SMPS), motor
buk465-200a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK465-200AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 200 Vapplications. ID Drain current (DC) 14 AThe device is intended for use in Ptot Total power dissipation 125
buk465-100a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK465-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 100 Vapplications. ID Drain current (DC) 26 AThe device is intended for use in Ptot Total power dissipation 125
buk464-200a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK464-200AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 200 Vapplications. ID Drain current (DC) 9.2 AThe device is intended for use in Ptot Total power dissipation 90
buk465-60a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK465-60AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage -60Aapplications. ID Drain current (DC) 60 VThe device is intended for use in Ptot Total power dissipation 41 A
buk465-60h 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK465-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 43 AThe device is intended for use in Ptot Total power dissipation 125
buk462-60a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK462-60A mGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 15 AThe device is intended for use in Ptot Total power dissipation 60
buk463-100a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK463-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount Drain-source voltage 100 Vapplications. VDS Drain current (DC) 14 AThe device is intended for use in ID Total power dissipation 75 WSw
buk464-60h 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK464-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 41 AThe device is intended for use in Ptot Total power dissipation 125
Другие MOSFET... BUK456-200A , BUK456-200B , BUK456-800A , BUK456-800B , BUK462-100A , BUK463-100A , BUK465-100A , BUK465-200A , K4145 , BUK473-100A , BUK473-100B , BUK482-100A , BUK543-100A , BUK545-100A , BUK545-100B , BUK552-100A , BUK552-100B .
Список транзисторов
Обновления
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