TPCA8A05-H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPCA8A05-H
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 7.4 nC
trⓘ - Время нарастания: 2.2 ns
Cossⓘ - Выходная емкость: 330 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0129 Ohm
Тип корпуса: SOP-ADVANCE
Аналог (замена) для TPCA8A05-H
TPCA8A05-H Datasheet (PDF)
tpca8a05-h.pdf
TPCA8A05-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A05-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.18 0.05 M A Portable Equipment Applications 5 Built-in a schottky barrier diode 0.15 0.05Low forward voltage: V = 0.6 V (max) DSF High
tpca8a01-h.pdf
TPCA8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS ) TPCA8A01-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A58Portable Equipment Applications Built-in schottky barrier diode 0.150.05Low forward voltage: VDSF = -0.6
tpca8a09-h.pdf
TPCA8A09-HMOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)TPCA8A09-HTPCA8A09-HTPCA8A09-HTPCA8A09-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Built-in a schottky barrier diodeLow forward voltage: VDSF = -0.6 V
tpca8a04-h.pdf
TPCA8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A04-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications 1.27 0.4 0.1 0.05 M A 8 5 Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) 0.15 0.05 High-sp
tpca8a08-h.pdf
TPCA8A08-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A08-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.18 0.05 M A Portable Equipment Applications 5 Built-in a schottky barrier diode 0.15 0.05Low forward voltage: V = 0.6 V (max) DSF High
tpca8a02-h.pdf
TPCA8A02-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A02-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications 0.40.11.270.50.10.05 M A8 5 Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) 0.150.05 Hi
Другие MOSFET... TPCA8107-H , TPCA8108 , TPCA8109 , TPCA8120 , TPCA8128 , TPCA8131 , TPCA8A02-H , TPCA8A04-H , RU6888R , TPCA8A08-H , TPCA8A09-H , TPCA8A10-H , TPCA8A11-H , TPCC8007 , TPCC8008 , TPCC8009 , TPCC8061-H .
