TPCC8007. Аналоги и основные параметры
Наименование производителя: TPCC8007
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 27 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 8.6 ns
Cossⓘ - Выходная емкость: 660 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0046 Ohm
Тип корпуса: TSON-ADVANCE
Аналог (замена) для TPCC8007
- подборⓘ MOSFET транзистора по параметрам
TPCC8007 даташит
tpcc8007.pdf
TPCC8007 MOSFETs Silicon N-channel MOS (U-MOS ) TPCC8007 TPCC8007 TPCC8007 TPCC8007 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 3.5 m (typ.) (VGS = 4.5 V) (3) Low leakage
tpcc8009.pdf
TPCC8009 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCC8009 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 5 m (typ.) ( VGS = 10 V) Low leakage current IDSS = 10 A (max) (VDS = 30 V)
tpcc8002-h.pdf
TPCC8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8002-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 7.1 nC (typ.) Low drain-source ON-resistance RDS (ON) = 7.6
tpcc8005-h.pdf
TPCC8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8005-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 9.1 nC (typ.) Low drain-source ON-resistance RDS (ON) = 5.2
Другие IGBT... TPCA8131, TPCA8A02-H, TPCA8A04-H, TPCA8A05-H, TPCA8A08-H, TPCA8A09-H, TPCA8A10-H, TPCA8A11-H, AO3407, TPCC8008, TPCC8009, TPCC8061-H, TPCC8062-H, TPCC8064-H, TPCC8065-H, TPCC8066-H, TPCC8067-H
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Список транзисторов
Обновления
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