TPCF8101. Аналоги и основные параметры
Наименование производителя: TPCF8101
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 0.7 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 12 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 335 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
Тип корпуса: VS8
Аналог (замена) для TPCF8101
- подборⓘ MOSFET транзистора по параметрам
TPCF8101 даташит
tpcf8101.pdf
TPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8101 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 22 m (typ.) High forward transfer admittance Yfs = 14 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -12 V) Enhancement model Vth = -0.5 to -1.2 V
tpcf8104.pdf
TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCF8104 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 21 m (typ.) High forward transfer admittance Yfs = 9.6 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V
tpcf8108.pdf
TPCF8108 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8108 TPCF8108 TPCF8108 TPCF8108 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) =
tpcf8105.pdf
TPCF8105 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8105 TPCF8105 TPCF8105 TPCF8105 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 24 m (typ.) (VG
Другие IGBT... TPCC8103, TPCC8104, TPCC8105, TPCC8131, TPCC8A01-H, TPCF8002, TPCF8003, TPCF8004, K2611, TPCF8105, TPCF8107, TPCF8108, TPCF8201, TPCF8301, TPCF8304, TPCF8305, TPCF8402
History: TPU80R900M
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