Справочник MOSFET. TPCF8108

 

TPCF8108 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TPCF8108
   Маркировка: F3H
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 19 nC
   trⓘ - Время нарастания: 8.6 ns
   Cossⓘ - Выходная емкость: 210 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.026 Ohm
   Тип корпуса: VS8

 Аналог (замена) для TPCF8108

 

 

TPCF8108 Datasheet (PDF)

 ..1. Size:219K  toshiba
 tpcf8108.pdf

TPCF8108 TPCF8108

TPCF8108MOSFETs Silicon P-Channel MOS (U-MOS)TPCF8108TPCF8108TPCF8108TPCF81081. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) =

 7.1. Size:264K  toshiba
 tpcf8104.pdf

TPCF8108 TPCF8108

TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCF8104 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 21 m (typ.) High forward transfer admittance: |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V

 7.2. Size:223K  toshiba
 tpcf8105.pdf

TPCF8108 TPCF8108

TPCF8105MOSFETs Silicon P-Channel MOS (U-MOS)TPCF8105TPCF8105TPCF8105TPCF81051. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 24 m (typ.) (VG

 7.3. Size:224K  toshiba
 tpcf8102.pdf

TPCF8108 TPCF8108

TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 24 m (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V

 7.4. Size:252K  toshiba
 tpcf8101.pdf

TPCF8108 TPCF8108

TPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8101 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 22 m (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -12 V) Enhancement model: Vth = -0.5 to -1.2 V

 7.5. Size:228K  toshiba
 tpcf8107.pdf

TPCF8108 TPCF8108

TPCF8107MOSFETs Silicon P-Channel MOS (U-MOS)TPCF8107TPCF8107TPCF8107TPCF81071. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) =

 7.6. Size:295K  toshiba
 tpcf8103.pdf

TPCF8108 TPCF8108

TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8103 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 m (typ.) High forward transfer admittance: |Yfs| = 4.7S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement-model: Vth = -0.5 to -1.2 V

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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