Справочник MOSFET. TPCF8B01

 

TPCF8B01 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TPCF8B01
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.33 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2.7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
   Тип корпуса: VS8
 

 Аналог (замена) для TPCF8B01

   - подбор ⓘ MOSFET транзистора по параметрам

 

TPCF8B01 Datasheet (PDF)

 ..1. Size:305K  toshiba
tpcf8b01.pdfpdf_icon

TPCF8B01

TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 m (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current: IDSS =-10 A (max) (VDS = -20 V) Enhancement-model: Vt

 9.1. Size:238K  toshiba
tpcf8305.pdfpdf_icon

TPCF8B01

TPCF8305MOSFETs Silicon P-Channel MOS (U-MOS)TPCF8305TPCF8305TPCF8305TPCF83051. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 47 m (typ.) (VGS = -4.5 V)(3) Low leakage

 9.2. Size:232K  toshiba
tpcf8003.pdfpdf_icon

TPCF8B01

TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCF8003 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) =14 m (typ.) VGS= 4.5V Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2

 9.3. Size:264K  toshiba
tpcf8104.pdfpdf_icon

TPCF8B01

TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCF8104 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 21 m (typ.) High forward transfer admittance: |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V

Другие MOSFET... TPCF8105 , TPCF8107 , TPCF8108 , TPCF8201 , TPCF8301 , TPCF8304 , TPCF8305 , TPCF8402 , BS170 , TPCP8003-H , TPCP8004 , TPCP8005-H , TPCP8006 , TPCP8007-H , TPCP8008-H , TPCP8101 , TPCP8102 .

History: IPB80P04P4L-04 | APM4101K | VBL1154N | STF9N65M2 | FTK3134K | IXFN52N90P

 

 
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