TPCP8003-H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TPCP8003-H
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.84 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2.2 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 75 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
Тип корпуса: PS8
- подбор MOSFET транзистора по параметрам
TPCP8003-H Datasheet (PDF)
tpcp8003-h.pdf

TPCP8003-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCP8003-H High Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications 0.330.05 0.05 M A8 5Portable Equipment Applications Small footprint due to a small and thin package 0.475 1 4 High speed switching B0.05 M B0.65 Small gate charge:
tpcp8004.pdf

TPCP8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCP8004 Notebook PC Applications Unit: mmPortable Equipment Applications 0.33 0.05 M 0.05 A 8 5 Small footprint due to a small and thin package High speed switching Small gate charge: Qg = 26nC (typ.) 0.475 1 4 B M 0.05 B 0.65 Low drain-source ON-resistance:
tpcp8006.pdf

TPCP8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) TPCP8006 Notebook PC Applications Portable Equipment Applications Unit: mm0.33 0.05 M 0.05 A Small footprint due to small and thin package 8 5 Low drain-source ON-resistance: RDS (ON) = 6.5 m (typ.) High forward transfer admittance:|Yfs| = 36 S (typ.) Low leakage curr
tpcp8005-h.pdf

TPCP8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCP8005-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications 0.330.05 0.05 M APortable Equipment Applications 8 5 Small footprint due to a small and thin package High-speed switching 0.475 1 4B0.05 M B0.65 Small gate charge: QSW = 5.0 nC (typ.
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SRT06N095LDG | SIHG47N60S | SM1A24NSK | 9N95 | TPA90R350A | AP1A003GMT-HF | HGI110N08AL
History: SRT06N095LDG | SIHG47N60S | SM1A24NSK | 9N95 | TPA90R350A | AP1A003GMT-HF | HGI110N08AL



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