TPCP8006 - Даташиты. Аналоги. Основные параметры

TPCP8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) TPCP8006 Notebook PC Applications Portable Equipment Applications Unit: mm0.33 0.05 M 0.05 A Small footprint due to small and thin package 8 5 Low drain-source ON-resistance: RDS (ON) = 6.5 m (typ.) High forward transfer admittance:|Yfs| = 36 S (typ.) Low leakage curr

TPCP8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCP8004 Notebook PC Applications Unit: mmPortable Equipment Applications 0.33 0.05 M 0.05 A 8 5 Small footprint due to a small and thin package High speed switching Small gate charge: Qg = 26nC (typ.) 0.475 1 4 B M 0.05 B 0.65 Low drain-source ON-resistance:

TPCP8003-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCP8003-H High Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications 0.330.05 0.05 M A8 5Portable Equipment Applications Small footprint due to a small and thin package 0.475 1 4 High speed switching B0.05 M B0.65 Small gate charge:

TPCP8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCP8005-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications 0.330.05 0.05 M APortable Equipment Applications 8 5 Small footprint due to a small and thin package High-speed switching 0.475 1 4B0.05 M B0.65 Small gate charge: QSW = 5.0 nC (typ.

TPCP8007-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCP8007-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 2.7 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 40 m (typ.)

TPCP8002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) TPCP8002 Notebook PC Applications Portable Equipment Applications Unit: mm0.330.05 Lead (Pb)-Free 0.05 M A8 5 Small footprint due to small and thin package Low drain-source ON-resistance : RDS (ON) = 7 m (typ.) High forward transfer admittance 0.475 1 4B:|Yfs| = 36 S

TPCP8009MOSFETs Silicon N-channel MOS (U-MOS)TPCP8009TPCP8009TPCP8009TPCP80091. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge : QSW = 9.6 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 9.5 m (typ.) (VGS = 10 V)

TPCP8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCP8008-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications 0.33 0.05 M 0.05 A 8 5 Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.8 nC (typ.) Low drain-sour

TPCP8001-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TENTATIVE TPCP8001-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications 0.330.05Portable Equipment Applications M+0.05 A Small footprint due to small and thin package High speed switching 0.170.02B0.330.05 0.05M B