Справочник MOSFET. TPCP8205-H

 

TPCP8205-H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TPCP8205-H
   Маркировка: 8205H
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.36 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 13.8 nC
   trⓘ - Время нарастания: 4.1 ns
   Cossⓘ - Выходная емкость: 177 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.026 Ohm
   Тип корпуса: PS8

 Аналог (замена) для TPCP8205-H

 

 

TPCP8205-H Datasheet (PDF)

 ..1. Size:233K  toshiba
 tpcp8205-h.pdf

TPCP8205-H TPCP8205-H

TPCP8205-HMOSFETs Silicon N-Channel MOS (U-MOS)TPCP8205-HTPCP8205-HTPCP8205-HTPCP8205-H1. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Low drain-source on-resistance: RDS(ON) = 20 m

 7.1. Size:250K  toshiba
 tpcp8204.pdf

TPCP8205-H TPCP8205-H

TPCP8204TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCP8204 Portable Equipment Applications Motor Drive Applications Unit: mm Small footprint due to small and thin package 0.330.05 Low drain-source ON resistance: RDS (ON) = 38 m (typ.) M A 0.058 5VGS=10V High forward transfer admittance:|Yfs| = 8 S (typ.) Low leakage

 7.2. Size:237K  toshiba
 tpcp8207.pdf

TPCP8205-H TPCP8205-H

TPCP8207MOSFETs Silicon N-channel MOS (U-MOS)TPCP8207TPCP8207TPCP8207TPCP82071. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Small gate charge : QSW = 4.7 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) =

 7.3. Size:242K  toshiba
 tpcp8201.pdf

TPCP8205-H TPCP8205-H

TPCP8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCP8201 Portable Equipment Applications Motor Drive Applications Unit: mm0.330.05DC-DC Converter Applications 0.05 M A8 5 Lead(Pb)-Free Low drain-source ON resistance : RDS (ON) = 38 m (typ.) High forward transfer admittance 0.475 1 4B 0.05 M B0.65:|Yfs| = 7.0 S

 7.4. Size:232K  toshiba
 tpcp8203.pdf

TPCP8205-H TPCP8205-H

TPCP8203 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCP8203 Portable Equipment Applications Motor Drive Applications Unit: mm0.330.05DC/DC Converters 0.05 M A8 5 Lead (Pb)-free Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 31 m (typ.) 0.475 1 4 High forward transfer admittance: |

 7.5. Size:230K  toshiba
 tpcp8202.pdf

TPCP8205-H TPCP8205-H

TPCP8202 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIV) TPCP8202 Portable Equipment Applications Motor Drive Applications Unit: mm0.330.05DC-DC Converters 0.05 M A8 5 Lead(Pb)-Free Low drain-source ON-resistance: RDS(ON) = 19 m (typ.) High forward transfer admittance: |Yfs| = 20 S (typ.) 0.475 1 4B Low leakage current: IDSS = 1

 7.6. Size:234K  toshiba
 tpcp8206.pdf

TPCP8205-H TPCP8205-H

TPCP8206MOSFETs Silicon N-Channel MOS (U-MOS)TPCP8206TPCP8206TPCP8206TPCP82061. Applications1. Applications1. Applications1. Applications Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 19 m (typ.) (VGS = 4.5 V)(3) Low leakage current: IDSS = 1

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