TPCP8401 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPCP8401
Маркировка: 8401
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.1 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.1 A
Tjⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 9.8 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
Тип корпуса: PS8
TPCP8401 Datasheet (PDF)
tpcp8401.pdf
TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS / -MOS ) TPCP8401 Switching Regulator Applications Load Switch Applications Unit: mm0.330.05 Lead(Pb)-Free 0.05 M A 8 5 Multi-chip discrete device; built-in P channel MOS FET for main switch and N Channel MOS FET for drive Small footprint due to small and thin pack
tpcp8404.pdf
TPCP8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MO/U-MOS) TPCP8404 Portable Equipment Applications Motor Drive Applications Unit: mm0.330.05 Low drain-source ON-resistance : P Channel RDS (ON) = 38 m(typ.) 0.05 M A8 5(VGS=-10V) N Channel RDS (ON) = 38 m(typ.) VGS=10V) High forward transfer admittance : P Channel |Yfs
tpcp8405.pdf
TPCP8405MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)TPCP8405TPCP8405TPCP8405TPCP84051. Applications1. Applications1. Applications1. Applications Cell Phones Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistanceP-channel RDS(ON) = 24 m (typ.) (VGS = -10 V), N-channel RDS(ON) = 20 m (typ.) (VGS = 10 V)
tpcp8403.pdf
TPCP8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8403 Portable Equipment Applications Motor Drive Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A 8 5 Lead(Pb)-Free Low drain-source ON resistance : P Channel RDS (ON) = 55 m (typ.) N Channel RDS (ON) = 31 m (typ.) High forward trans
tpcp8407.pdf
TPCP8407MOSFETs Silicon P-/N-Channel MOS (U-MOS /U-MOS )TPCP8407TPCP8407TPCP8407TPCP84071. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low gate chargeN-channel MOSFET: QSW = 4.7 nC (typ.)P-channel MOSFET: QSW = 5.5 nC (typ.)(3) Lo
tpcp8406.pdf
TPCP8406MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)TPCP8406TPCP8406TPCP8406TPCP84061. Applications1. Applications1. Applications1. Applications Cell Phones Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistanceP-channel RDS(ON) = 33 m (typ.) (VGS = -10 V), N-channel RDS(ON) = 24 m (typ.) (VGS = 10 V)
tpcp8402.pdf
TPCP8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8402 Portable Equipment Applications Mortor Drive Applications Unit: mm DC-DC Converter Applications Low drain-source ON resistance : P Channel R = 60 m (typ.) DS (ON) N Channel R = 38 m (typ.) DS (ON) High forward transfer admittance : P Channel |Y | = 6.0
tpcp8404.pdf
SMD Type MOSFETTransistorsSilicon P,N Channel MOSFETTPCP84040.330.05 Features 2-3V1G0.05 M A8 5 Low drain-source ON-resistance:P Channel RDS(ON) = 38m (typ.)(VGS=-10V)N Channel RDS(ON) = 38m (typ.)(VGS=10V) High forward transfer admittance:0.475 1 4B0.05 M B0.65P Channel |Yfs| = 7.3S (typ.)2.90.1AN Channel |Yfs| = 8S (typ.)0.80.05 Low leakage curr
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100