BUK552-100B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK552-100B
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
Tjⓘ - Максимальная температура канала: 150 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
Тип корпуса: SOT78
Аналог (замена) для BUK552-100B
BUK552-100B Datasheet (PDF)
buk552-100a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK552 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain
buk552-60a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK552-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK552 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain curre
buk555-200a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK555 -200A -200BThe device is intended for use in VDS Drain-source voltage 200 200 VSwitched Mode Power Supplies ID Drain
buk556-60h 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK556-60H Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 60 Aautomotive and general purpose Ptot Total p
buk553-100b.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK553 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain
buk555-60a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK555-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK555 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain curre
buk553-48c 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK553-48C Voltage clamped logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAProtected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNITmode logic level field-effect powertransistor in a plastic envelope. V(CL)DSR Drain-source clamp voltage 40 48 58 VThe device is intended for use in ID Drain current (
buk553-60a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK553-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK553 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain curre
buk553-100a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK553 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain
buk555-60h 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK555-60H Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor ina plastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 41 AAutomotive applications, Switched Ptot Tota
buk554-60h 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK554-60H Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 39 Aautomotive and general purpose Ptot Total po
buk555-100a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK555-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK555 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain
buk555-200b.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK555 -200A -200BThe device is intended for use in VDS Drain-source voltage 200 200 VSwitched Mode Power Supplies ID Drain
buk556-60a 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK556-60A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 50 ASwitched Mode Power Supplies Ptot Total pow
buk555-100.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK555-100A/BDESCRIPTIONDrain Source Voltage-: V =100V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE
Другие MOSFET... BUK466-200A , BUK473-100A , BUK473-100B , BUK482-100A , BUK543-100A , BUK545-100A , BUK545-100B , BUK552-100A , IRFP260 , BUK553-100A , BUK555-100A , BUK555-100B , BUK555-200A , BUK563-100A , BUK565-100A , BUK581-100A , BUK582-100A .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918