2SJ378 - параметры транзистора MOSFET, его аналоги, datasheet

2SJ378 Datasheet (PDF)

..1. Size:417K toshiba
2sj378.pdf pdf_icon

2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ378 Relay Drive, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.16 (typ.) DS (ON) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -60 V) DS Enhancement-mo

9.1. Size:415K toshiba
2sj377.pdf pdf_icon

2SJ377 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ377 Relay Drive, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.16 (typ.) DS (ON) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -60 V) DS Enhancement-mo

9.2. Size:329K shenzhen
2sj374.pdf pdf_icon

9.3. Size:831K cn vbsemi
2sj377.pdf pdf_icon

2SJ377www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbol