2SK2200 - описание и поиск аналогов

2SK2200 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2200 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.28 (typ.) DS (ON) High forward transfer admittance Y = 3.5 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhance

2SK2208 External dimensions 2 ...... FM100 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 900 V V 900 V I = 100 A, V = 0V DSS (BR) DSS D GS V 30 V I 100 nA V = 30V GSS GSS GS I 5I 100 A V = 900V, V = 0V D A DSS DS GS I 20 A V 2.0 3.0 4.0 V V = 10V, I = 1mA D (pulse) TH DS

2SK2201 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2201 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.28 (typ.) DS (ON) High forward transfer admittance Y = 3.5 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhance

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK2202 Silicon N Channel MOS FET REJ03G1002-0300 (Previous ADE-208-139) Rev.3.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003AD-A

2SK2207 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 900 V V 900 V I = 100 A, V = 0V DSS (BR) DSS D GS V 30 V I 100 nA V = 30V GSS GSS GS I 3I 100 A V = 900V, V = 0V D A DSS DS GS I 12 A V 2.0 3.0 4.0 V V = 10V, I = 1mA D (pulse) TH DS