2SK2417 - описание и поиск аналогов

2SK2417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2417 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.42 (typ.) High forward transfer admittance Y = 7.5 S (typ.) fs Low leakage current I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode Vth = 1.5 3.5

isc N-Channel MOSFET Transistor 2SK2417 DESCRIPTION Drain Current I = 7.5A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2412 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2412 is N-Channel MOS Field Effect Transistor de- (in millimeters) signed for high speed switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 FEATURES 2.7 0.2 Low On-Resistance RDS(on)1 = 70 m MAX. (@ VGS = 10 V, ID = 10 A) RDS(on)2 =

2SK2419 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 60 V V 60 V I = 100 A, V = 0V DSS (BR) DSS D GS V 20 V I 100 nA V = 20V GSS GSS GS I 22 A I 100 A V = 60V, V = 0V D DSS DS GS I 88 A V 2.0 4.0 V V = 10V, I = 250 A D (pulse) TH DS D

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2410 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2410 is N-Channel MOS Field Effect Transistor de- (in millimeters) signed for high speed switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 FEATURES 2.7 0.2 Low On-Resistance RDS(on)1 = 40 m MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 =

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2413 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2413 is N-Channel MOS Field Effect Transistor de- (in millimeter) signed for high speed switching applications. FEATURES 4.5 0.2 Low On-Resistance 8.0 0.2 RDS(on)1 = 70 m MAX. (@ VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 m MAX. (@ VGS =

2SK241 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK241 FM Tuner, VHF and RF Amplifier Applications Unit mm Low reverse transfer capacitance Crss = 0.035 pF (typ.) Low noise figure NF = 1.7dB (typ.) High power gain GPS = 28dB (typ.) Recommend operation voltage 5 15 V Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2415 is N-Channel MOS Field Effect Transistor designed (in millimeters) for high voltage switching applications. 2.3 0.2 6.5 0.2 5.0 0.2 0.5 0.1 FEATURES 4 Low On-Resistance RDS(on)1 = 0.10 MAX. (@ VGS = 10 V, ID =

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2411 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high speed switching applications. 4.8 MAX. 10.6 MAX. 3.6 0.2 1.3 0.2 FEATURES 10.0 Low On-Resistance RDS(on)1 = 40 m MAX. (@ VGS = 10 V, ID = 15 A)

2SK2414 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Motor