2SK2542 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK2542
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 80 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 26 ns
Cossⓘ - Выходная емкость: 400 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.85 Ohm
Тип корпуса: TO220AB
2SK2542 Datasheet (PDF)
2sk2542.pdf
2SK2542 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2542 Switching Regulator Applications Unit: mm 4 V gate drive Low drain-source ON resistance : R = 0.75 (typ.) DS (ON) High forward transfer admittance : |Y | = 7.0 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 500 V) DS Enhancement-mode : V = 2.0~4.0 V (V = 10 V, I
2sk2544.pdf
2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2544 Switching Regulator Applications Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.9 (typ.) High forward transfer admittance : |Yfs| = 5.5 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 600 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M
2sk2549.pdf
2SK2549 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2549 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm 2.5 V gate drive Low drain-source ON resistance : R = 0.29 (typ.) DS (ON) High forward transfer admittance : |Y | = 3.0 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 16 V) DS Enhancement-mode : V
2sk2545.pdf
2SK2545 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2545 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.9 (typ.) High forward transfer admittance : |Y | = 5.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10
2sk2543.pdf
2SK2543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2543 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.75 (typ.) High forward transfer admittance : |Y | = 7.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS DMa
2sk2543.pdf
isc N-Channel MOSFET Transistor 2SK2543FEATURESStatic drain-source on-resistance:RDS(on) 0.85Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral purpose applicationsABSOLUTE MAXIMUM RATINGS
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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