2SK2605 - описание и поиск аналогов

2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2605 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS = 1.9 (typ.) (ON) High forward transfer admittance Y = 3.8 S (typ.) fs Low leakage current I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I = 1 mA) DS D

2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2607 Chopper Regulator, DC-DC Converter and Moter Drive Applications Unit mm Low drain-source ON resistance RDS = 1.0 (typ.) (ON) High forward transfer admittance Y 7.0 S (typ.) fs = Low leakage current I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode Vth = 2.0 4.0

2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2604 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS = 1.9 (typ.) (ON) High forward transfer admittance Y = 3.8 S (typ.) fs Low leakage current I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I = 1 mA) DS D

2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2608 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS = 3.73 (typ.) (ON) High forward transfer admittance Y 2.6 S (typ.) fs = Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I = 1 mA) DS D

2SK2603 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2603 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 3.0 (typ.) (ON) High forward transfer admittance Y = 2.6 S (typ.) fs Low leakage current I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode Vth = 2.0 4.0

2SK2606 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2606 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 1.0 (typ.) High forward transfer admittance Yfs = 7.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 640 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 1

2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2602 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS = 0.9 (typ.) (ON) High forward transfer admittance Y = 5.5 S (typ.) fs Low leakage current I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I = 1 mA) DS D Ma

2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2601 DC-DC Converter, Relay Drive and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 0.75 (typ.) (ON) High forward transfer admittance Y = 7.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V =

isc N-Channel MOSFET Transistor 2SK260 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

isc N-Channel MOSFET Transistor 2SK2608 FEATURES Static drain-source on-resistance RDS(on) 3.78 (TYP) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Efficient and reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK2601 FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER