BUK582-100A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK582-100A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.8 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 1.7 A
Максимальная температура канала (Tj): 150 °C
Сопротивление сток-исток открытого транзистора (Rds): 0.31 Ohm
Тип корпуса: SOT223
Аналог (замена) для BUK582-100A
BUK582-100A Datasheet (PDF)
buk582-100a 2.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 100 Vsuitable for surface mount ID Drain current (DC) 1.7 Aapplications. Ptot Total power dissipation 1.8 W
buk582-60a 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK582-60A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 60 Vsuitable for surface mount ID Drain current (DC) 2.5 Aapplications. Ptot Total power dissipation 1.7 W
buk581-60a 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK581-60A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 60 Vsuitable for surface mount ID Drain current (DC) 1.5 Aapplications. Ptot Total power dissipation 1.5 W
buk583-60a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK583-60A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 60 Vsuitable for surface mount ID Drain current (DC) 3.2 Aapplications. Ptot Total power dissipation 1.8 W
buk581-100a 2.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 100 Vsuitable for surface mount ID Drain current (DC) 0.9 Aapplications. Ptot Total power dissipation 1.5 W
Другие MOSFET... BUK552-100B , BUK553-100A , BUK555-100A , BUK555-100B , BUK555-200A , BUK563-100A , BUK565-100A , BUK581-100A , IRF9540 , BUK7506-30 , BUK7508-55 , BUK7510-30 , BUK7514-30 , BUK7514-55 , BUK7518-55 , BUK7524-55 , BUK7528-55 .
