Справочник MOSFET. 2SK2749

 

2SK2749 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK2749
   Маркировка: K2749
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 55 nC
   trⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 140 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
   Тип корпуса: TO3P

 Аналог (замена) для 2SK2749

 

 

2SK2749 Datasheet (PDF)

 ..1. Size:412K  toshiba
 2sk2749.pdf

2SK2749 2SK2749

2SK2749 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2749 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.6 (typ.) (ON) High forward transfer admittance : |Y | = 5.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0

 8.1. Size:414K  toshiba
 2sk2741.pdf

2SK2749 2SK2749

2SK2741 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2741 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.12 (typ.) DS (ON) High forward transfer admittance : |Y | = 5.0 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS Enhancem

 8.2. Size:418K  toshiba
 2sk2742.pdf

2SK2749 2SK2749

2SK2742 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2742 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.28 (typ.) DS (ON) High forward transfer admittance : |Y | = 3.5 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhance

 8.3. Size:399K  toshiba
 2sk2745.pdf

2SK2749 2SK2749

2SK2745 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2745 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 7.0 m (typ.) DS (ON) High forward transfer admittance : |Y | = 50 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 50 V) DS Enhanceme

 8.4. Size:420K  toshiba
 2sk2746.pdf

2SK2749 2SK2749

2SK2746 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2746 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.3 (typ.) (ON) High forward transfer admittance : |Y | = 5.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1

 8.5. Size:177K  toshiba
 2sk2744.pdf

2SK2749 2SK2749

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 2sk2740 1-5.pdf

2SK2749 2SK2749

 8.7. Size:143K  rohm
 2sk2740.pdf

2SK2749 2SK2749

TransistorsSwitching (600V, 7A)2SK2740FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications15

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