BUK7508-55 - описание и поиск аналогов

Philips Semiconductors Product specification TrenchMOS transistor BUK7508-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 75 A features very low on-state

Philips Semiconductors Product specification TrenchMOS transistor BUK7508-55A Standard level FET BUK7608-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 75 A Using trench tec

BUK7506-55A; BUK7606-55A TrenchMOS standard level FET Rev. 02 03 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7506-55A in SOT78 (TO-220AB) BUK7606-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q10

Philips Semiconductors Product specification TrenchMOS transistor BUK7506-55A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology which features ID Drain current (DC) 75 A very low on-state resis

BUK7509-75A; BUK7609-75A TrenchMOS standard level FET Rev. 02 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7509-75A in SOT78 (TO-220AB) BUK7609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS te

BUK75/7607-55B TrenchMOS standard level FET Rev. 01 15 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability BUK7507-55B in SOT78 (TO-220AB) BUK7607-55B in SOT404 (D2-PAK). 1.2 Features Very low on-stat

BUK75/7606-75B TrenchMOS standard level FET Rev. 02 20 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK7506-75B in SOT78 (TO-220AB) BUK7606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-stat

BUK75/7609-55A TrenchMOS standard level FET Rev. 01 6 August 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7509-55A in SOT78 (TO-220AB) BUK7609-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q101 complia

BUK75/7607-30B TrenchMOS standard level FET Rev. 01 07 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability BUK7507-30B in SOT78 (TO-220AB) BUK7607-30B in SOT404 (D2-PAK). 1.2 Features Very low on-st

BUK7509-75A; BUK7609-75A TrenchMOS standard level FET Rev. 02 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7509-75A in SOT78 (TO-220AB) BUK7609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS te

Philips Semiconductors Product specification TrenchMOS transistor BUK7505-30A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V trench technology which features ID Drain current (DC) 75 A very low on-state resis

Philips Semiconductors Product specification TrenchMOS transistor BUK7506-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V trench technology. The device ID Drain current (DC) 75 A features very low on-state

BUK7509-55A www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.005 at VGS = 10 V 120 Material categorization 60 0.008 at VGS = 7.5 V 100 TO-220AB D G S N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit

isc N-Channel MOSFET Transistor BUK7506-55A FEATURES Static drain-source on-resistance RDS(on) 6.3m Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Automotive and general purpose power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour