2SK2882 - параметры транзистора MOSFET, его аналоги, datasheet

2SK2882 Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: 2SK2882
   Маркировка: K2882
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 57 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 610 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
   Тип корпуса: TO220NIS

Аналог (замена) для 2SK2882

- подбор MOSFET транзистора по параметрам

2SK2882 Datasheet (PDF)

..1. Size:318K toshiba
2sk2882.pdf pdf_icon

..2. Size:279K inchange semiconductor
2sk2882.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK2882FEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 0.12(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

8.1. Size:417K toshiba
2sk2889.pdf pdf_icon

2SK2889 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2889 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.54 (typ.) High forward transfer admittance : |Y | = 9.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DSS Enhancement-mode : Vth = 2.0~4.0 V

8.2. Size:430K toshiba
2sk2883.pdf pdf_icon

2SK2883 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2883 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 3.0 (typ.) High forward transfer admittance : |Y | = 2.6 S (typ.) fs Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4

8.3. Size:423K toshiba
2sk2886.pdf pdf_icon

2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2886 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 14 m (typ.) (ON) High forward transfer admittance : |Y | = 31 S (typ.) fs Low leakage current : I = 100 A (max) (V = 50 V) DSS DS Enhancement-mode : Vth = 0.8~2.0 V (V

8.4. Size:427K toshiba
2sk2884.pdf pdf_icon

2SK2884 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2884 Chopper Regulator, DC-DC Converter Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.9 (typ.) High forward transfer admittance : |Y | = 3.8 S (typ.) fs Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I =

8.5. Size:135K rohm
2sk2887 1-5.pdf pdf_icon

8.6. Size:139K rohm
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TransistorsSwitching (200V, 3A)2SK2887FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications16

8.7. Size:34K hitachi
2sk2885l-s.pdf pdf_icon

2SK2885(L), 2SK2885(S)Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-545 A2nd. EditionFeatures Low on-resistanceRDS(on) = 10m typ. 4V gate drive devices. High speed switchingOutlineLDPAK4 4D123123G 1. Gate2. Drain3. Source4. DrainS2SK2885(L), 2SK2885(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDr

8.8. Size:38K hitachi
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8.9. Size:114K isahaya
2sk2880.pdf pdf_icon

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

8.10. Size:103K isahaya
2sk2881.pdf pdf_icon

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is alw

8.11. Size:282K inchange semiconductor
2sk2885l.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK2885LFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

8.12. Size:356K inchange semiconductor
2sk2889b.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK2889BFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.13. Size:286K inchange semiconductor
2sk2887.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK2887FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

8.14. Size:234K inchange semiconductor
2sk2886.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK2886DESCRIPTIONDrain Current I = 45A@ T =25D CDrain Source Voltage-: V = 50V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL VALU

8.15. Size:357K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK2884BFEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.16. Size:356K inchange semiconductor
2sk2885s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK2885SFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

8.17. Size:282K inchange semiconductor
2sk2889k.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK2889KFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.18. Size:283K inchange semiconductor
2sk2884k.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK2884KFEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.19. Size:283K inchange semiconductor
2sk2883k.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK2883KFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 3.6(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.20. Size:357K inchange semiconductor
2sk2883b.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK2883BFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 3.6(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

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