2SK3309 - описание и поиск аналогов

2SK3309 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3309 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.48 (typ.) High forward transfer admittance Yfs = 4.3 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 450 V) Enhancement-mode Vth = 3.0 5.0 V (VDS = 10 V, ID = 1 mA) Absolute

isc N-Channel MOSFET Transistor 2SK3309B FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3309K FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3305 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3305 is N-Channel DMOS FET device that features a PART NUMBER PACKAGE low gate charge and excellent switching characteristics, and 2SK3305 TO-220AB designed for high voltage applications such as switching power 2SK3305-S TO-262 supply, AC adapter.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3306 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3306 is N-Channel DMOS FET device that features PART NUMBER PACKAGE a low gate charge and excellent switching characteristics, and 2SK3306 Isolated TO-220 (MP-45F) designed for high voltage applications such as switching power supply, AC adapter.

2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3302 Switching Regulator and DC-DC Converter Applications Unit mm Low drain-source ON resistance RDS (ON) = 11.5 (typ.) High forward transfer admittance Yfs = 0.4 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V,

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3304 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3304 is N-Channel MOS FET device that features a PART NUMBER PACKAGE Low gate charge and excellent switching characteristics, and 2SK3304 TO-3P designed for high voltage applications such as switching power supply. FEATURES (TO-3P) Low gate c

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3307 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3307 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3307 TO-3P FEATURES Super low on-state resistance RDS(on)1 = 9.5 m MAX. (VGS = 10 V, ID = 35 A) (TO-3P) RDS(on)2 = 14

SMD Type MOSFET MOS Field Effect Transistor 2SK3305 TO-263 Unit mm +0.2 Features 4.57-0.2 +0.1 1.27-0.1 Low gate charge QG = 13 nC TYP. (VDD = 400V, VGS =10 V, ID =5.0A) Gate voltage rating 30 V +0.1 0.1max 1.27-0.1 Low on-state resistance +0.1 RDS(on) =1.5 MAX. (VGS =10V, ID =2.5A) 0.81-0.1 2.54 Avalanche capability ratings 1Gate +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.

SMD Type MOSFET N-Channel MOSFET 2SK3305-ZJ Features VDS S = 500V ID = 5 A (VGS = 10V) RDS(ON) 1.5 (VGS = 10V) Gate voltage rating 30 V Avalanche capability ratings Drain (D) Body Gate (G) Diode Source (S) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS 30 Con

isc N-Channel MOSFET Transistor 2SK3305 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3305-ZJ FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3301D FEATURES Drain Current I = 1A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 20 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

isc N-Channel MOSFET Transistor 2SK3305-S FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3307 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3306 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3301I FEATURES Drain Current I = 1A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 20 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr