BUK7524-55 datasheet, аналоги, основные параметры
Наименование производителя: BUK7524-55 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 103 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 16 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
Тип корпуса: SOT78
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Аналог (замена) для BUK7524-55
- подборⓘ MOSFET транзистора по параметрам
BUK7524-55 даташит
..1. Size:52K philips
buk7524-55 3.pdf 
Philips Semiconductors Product specification TrenchMOS transistor BUK7524-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 45 A features very low on-state
0.1. Size:314K philips
buk7524-55a buk7524-55a buk7624-55a.pdf 
BUK7524-55A; BUK7624-55A TrenchMOS standard level FET Rev. 02 01 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7524-55A in SOT78 (TO-220AB) BUK7624-55A in SOT404 (D2-PAK). 2. Features TrenchMOS techno
7.1. Size:313K philips
buk7524 buk7624 55a-01.pdf 
BUK7524-55A; BUK7624-55A TrenchMOS standard level FET Rev. 01 25 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7524-55A in SOT78 (TO-220AB) BUK7624-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS tec
8.1. Size:96K philips
buk7528-55a buk7628-55a.pdf 
Philips Semiconductors Product specification TrenchMOS transistor BUK7528-55A Standard level FET BUK7628-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 41 A Using trench tec
8.2. Size:222K philips
buk752r3-40c.pdf 
BUK752R3-40C N-channel TrenchMOS standard level FET Rev. 03 26 January 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance
8.3. Size:80K philips
buk7528 buk7628-100a.pdf 
Philips Semiconductors Product specification TrenchMOS transistor BUK7528-100A Standard level FET BUK7628-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V available in TO220AB and SOT404 . ID Drain current (DC) 47 A Using trench
8.4. Size:52K philips
buk7520-55 2.pdf 
Philips Semiconductors Product specification TrenchMOS transistor BUK7520-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 52 A features very low on-state
8.5. Size:294K philips
buk7526-100b buk7626-100b.pdf 
BUK75/7626-100B TrenchMOS standard level FET Rev. 01 11 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability BUK7526-100B in SOT78 (TO-220AB) BUK7626-100B in SOT404 (D2-PAK). 1.2 Features Very low on
8.6. Size:310K philips
buk7523-75a buk7623-75a.pdf 
BUK7523-75A; BUK7623-75A TrenchMOS standard level FET Rev. 01 09 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7523-75A in SOT78 (TO-220AB) BUK7623-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS tec
8.7. Size:52K philips
buk7528-55.pdf 
Philips Semiconductors Product specification TrenchMOS transistor BUK7528-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 40 A features very low on-state
8.9. Size:211K nxp
buk752r7-60e.pdf 
BUK752R7-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repe
8.10. Size:212K nxp
buk752r3-40e.pdf 
BUK752R3-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repe
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