Справочник MOSFET. BUK7524-55

 

BUK7524-55 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK7524-55
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 103 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
   Тип корпуса: SOT78

 Аналог (замена) для BUK7524-55

 

 

BUK7524-55 Datasheet (PDF)

 ..1. Size:52K  philips
buk7524-55 3.pdf

BUK7524-55
BUK7524-55

Philips Semiconductors Product specification TrenchMOS transistor BUK7524-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 45 Afeatures very low on-state

 0.1. Size:314K  philips
buk7524-55a buk7524-55a buk7624-55a.pdf

BUK7524-55
BUK7524-55

BUK7524-55A; BUK7624-55ATrenchMOS standard level FETRev. 02 01 March 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7524-55A in SOT78 (TO-220AB)BUK7624-55A in SOT404 (D2-PAK).2. Features TrenchMOS techno

 7.1. Size:313K  philips
buk7524 buk7624 55a-01.pdf

BUK7524-55
BUK7524-55

BUK7524-55A; BUK7624-55ATrenchMOS standard level FETRev. 01 25 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7524-55A in SOT78 (TO-220AB)BUK7624-55A in SOT404 (D 2-PAK).2. Features TrenchMOS tec

 8.1. Size:96K  philips
buk7528-55a buk7628-55a.pdf

BUK7524-55
BUK7524-55

Philips Semiconductors Product specification TrenchMOS transistor BUK7528-55A Standard level FET BUK7628-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 41 AUsing trench tec

 8.2. Size:222K  philips
buk752r3-40c.pdf

BUK7524-55
BUK7524-55

BUK752R3-40CN-channel TrenchMOS standard level FETRev. 03 26 January 2009 Product data sheet1. Product profile1.1 General descriptionStandard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance

 8.3. Size:80K  philips
buk7528 buk7628-100a.pdf

BUK7524-55
BUK7524-55

Philips Semiconductors Product specification TrenchMOS transistor BUK7528-100A Standard level FET BUK7628-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 100 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 47 AUsing trench

 8.4. Size:52K  philips
buk7520-55 2.pdf

BUK7524-55
BUK7524-55

Philips Semiconductors Product specification TrenchMOS transistor BUK7520-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 52 Afeatures very low on-state

 8.5. Size:294K  philips
buk7526-100b buk7626-100b.pdf

BUK7524-55
BUK7524-55

BUK75/7626-100BTrenchMOS standard level FETRev. 01 11 April 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK7526-100B in SOT78 (TO-220AB)BUK7626-100B in SOT404 (D2-PAK).1.2 Features Very low on

 8.6. Size:310K  philips
buk7523-75a buk7623-75a.pdf

BUK7524-55
BUK7524-55

BUK7523-75A; BUK7623-75ATrenchMOS standard level FETRev. 01 09 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7523-75A in SOT78 (TO-220AB)BUK7623-75A in SOT404 (D 2-PAK).2. Features TrenchMOS tec

 8.7. Size:52K  philips
buk7528-55.pdf

BUK7524-55
BUK7524-55

Philips Semiconductors Product specification TrenchMOS transistor BUK7528-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 40 Afeatures very low on-state

 8.8. Size:315K  philips
buk7520-100a buk7620-100a.pdf

BUK7524-55
BUK7524-55

BUK7520-100A;BUK7620-100ATrenchMOS standard level FETRev. 01 5 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7520-100A in SOT78 (TO-220AB)BUK7620-100A in SOT404 (D 2-PAK).2. Features TrenchMOS

 8.9. Size:211K  nxp
buk752r7-60e.pdf

BUK7524-55
BUK7524-55

BUK752R7-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe

 8.10. Size:212K  nxp
buk752r3-40e.pdf

BUK7524-55
BUK7524-55

BUK752R3-40EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe

Другие MOSFET... BUK581-100A , BUK582-100A , BUK7506-30 , BUK7508-55 , BUK7510-30 , BUK7514-30 , BUK7514-55 , BUK7518-55 , IRFB3607 , BUK7528-55 , BUK7535-55 , BUK7575-55 , BUK7606-30 , BUK7608-55 , BUK7610-30 , BUK7614-30 , BUK7618-30 .

 

 
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