2SK4021
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK4021
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 20
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 4.5
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 15
ns
Cossⓘ - Выходная емкость: 120
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1
Ohm
Тип корпуса: PWMOLD2
- подбор MOSFET транзистора по параметрам
2SK4021
Datasheet (PDF)
..1. Size:271K toshiba
2sk4021.pdf 

2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4021 Switching Regulator and DC/DC Converter Applications Unit: mmMotor Drive Applications MAX Low drain-source ON-resistance : RDS (ON) = 0.8 (typ.) High forward transfer admittance : |Yfs| = 4.5 S (typ.)
..2. Size:354K inchange semiconductor
2sk4021.pdf 

isc N-Channel MOSFET Transistor 2SK4021FEATURESDrain Current : I = 4.5A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.1. Size:767K toshiba
2sk4020.pdf 

2SK4020 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4020 Chopper Regulator, DC/DC Converter and Motor Drive Unit: mmApplications MAX 4-V gate drive Low drain-source ON-resistance : RDS (ON) = 0.56 (typ.) High forward transfer admittance : |Yfs| = 4.5
8.2. Size:210K toshiba
2sk4026.pdf 

2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4026 Switching Regulator Applications Unit: mm MAXFeatures Low drain-source ON-resistance: RDS (ON) = 6.4 (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.) Low leakage current: IDSS
8.3. Size:215K toshiba
2sk4023.pdf 

2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4023 Switching Regulator, DC/DC Converter Unit: mm MAX 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 4.0 (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: ID
8.4. Size:208K toshiba
2sk4022.pdf 

2SK4022 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4022 Switching Regulator, DC/DC Converter and Unit: mmMotor Drive Applications MAX 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ
8.5. Size:156K nec
2sk4027.pdf 

DATA SHEETwww.DataSheet4U.comJUNCTION FIELD EFFECT TRANSISTOR2SK4027N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK4027 is suitable for converter of ECM. +0.1 +0.10.4 0.050.16 0.06FEATURES High gain Marking -1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 k) Low noise 3 -
8.7. Size:354K inchange semiconductor
2sk4020.pdf 

isc N-Channel MOSFET Transistor 2SK4020FEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.8(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.8. Size:354K inchange semiconductor
2sk4026.pdf 

isc N-Channel MOSFET Transistor 2SK4026FEATURESDrain Current : I = 1.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 9.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.9. Size:354K inchange semiconductor
2sk4023.pdf 

isc N-Channel MOSFET Transistor 2SK4023FEATURESDrain Current : I = 1.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 4.6(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.10. Size:353K inchange semiconductor
2sk4022.pdf 

isc N-Channel MOSFET Transistor 2SK4022FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 1.7(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.11. Size:234K inchange semiconductor
2sk402.pdf 

isc N-Channel MOSFET Transistor 2SK402DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching.High Cutoff frequency.No secondary breakdown.Suitable for switching reg
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History: CET04N10
| H5N2004DS