BUK7675-55 - описание и поиск аналогов

Philips Semiconductors Product specification TrenchMOS transistor BUK7675-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 19.7 A trench technology the de

BUK7575-55A; BUK7675-55A TrenchMOS standard level FET Rev. 01 8 December 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7575-55A in SOT78 (TO-220AB) BUK7675-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS tec

BUK7675-55A N-channel TrenchMOS standard level FET 25 August 2014 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101

BUK7675-55A www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS