TPC8105-H - аналоги и даташиты транзистора

 

TPC8105-H - Даташиты. Аналоги. Основные параметры


   Наименование производителя: TPC8105-H
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 485 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: SOP8
 

 Аналог (замена) для TPC8105-H

   - подбор ⓘ MOSFET транзистора по параметрам

 

TPC8105-H Datasheet (PDF)

 ..1. Size:320K  toshiba
 tpc8105-h.pdf pdf_icon

TPC8105-H

TPC8105-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) TPC8105-H High Speed and High Efficiency DC-DC Converters Unit: mmLithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge : Qg = 32 nC (typ.) Low drain-source ON resistan

 8.1. Size:215K  toshiba
 tpc8108.pdf pdf_icon

TPC8105-H

TPC8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8108 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 9.5 m (typ.) DS (ON) High forward transfer admittance: |Y | = 24 S (typ.) fs Low leakage

 8.2. Size:315K  toshiba
 tpc8104-h.pdf pdf_icon

TPC8105-H

TPC8104-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) TPC8104-H High Speed and High Efficiency DC-DC Converters Unit: mmLithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge : Qg = 17 nC (typ.) Low drain-source ON resistan

 8.3. Size:224K  toshiba
 tpc8107.pdf pdf_icon

TPC8105-H

TPC8107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8107 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 5.5 m (typ.) DS (ON) High forward transfer admittance: |Y | = 31 S (typ.) fs Low leakage

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... TPC8036-H , TPC8037-H , TPC8038-H , TPC8039-H , TPC8040-H , TPC8054-H , TPC8060-H , TPC8104-H , IRF9540 , TPC8107 , TPC8108 , TPC8109 , TPC8110 , TPC8111 , TPC8112 , TPC8113 , TPC8114 .

History: SVF4N60RD | ELM16800EA

 

 
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