TPC8212-H - Даташиты. Аналоги. Основные параметры

TPC8212-H www.DataSheet4U.comTOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8212-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable-Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 5.5 nC (typ.) Low drain-source O

TPC8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8210 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Low drain-source ON resistance: RDS (ON) = 11 m (typ.) High forward transfer admittance: |Y | = 13 S (typ.) fs Low leakage current: I = 10 A (max) (V = 30 V) DSS DS Enhancement

TPC8214-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8214-H High-Efficiency DCDC Converter Applications Unit: mmCCFL Inverters Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 2.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 130 m (typ.) High forward

TPC8213-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8213-H High-Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications Portable-Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 2.9 nC (typ.) Low drain-source ON-resistance: RDS

TPC8218-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8218-H DC-DC Converter Applications Unit: mmCCFL Inverters Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 2.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 38 m (typ.) High forward transfer admittance: |Yfs| = 12 S (

TPC8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8211 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Low drain-source ON resistance: RDS (ON) = 25 m (typ.) High forward transfer admittance: |Y | = 7.0 S (typ.) fs Low leakage current: I = 10 A (max) (V = 30 V) DSS DS Enhancemen

TPC8216-H www.DataSheet4U.comTOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8216-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.4 nC (typ.) Low drain-source ON-resistance