TPC8213-H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPC8213-H
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 6 nC
trⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 175 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
Тип корпуса: SOP8
TPC8213-H Datasheet (PDF)
tpc8213-h.pdf
TPC8213-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8213-H High-Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications Portable-Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 2.9 nC (typ.) Low drain-source ON-resistance: RDS
tpc8212-h.pdf
TPC8212-H www.DataSheet4U.comTOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8212-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable-Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 5.5 nC (typ.) Low drain-source O
tpc8210.pdf
TPC8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8210 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Low drain-source ON resistance: RDS (ON) = 11 m (typ.) High forward transfer admittance: |Y | = 13 S (typ.) fs Low leakage current: I = 10 A (max) (V = 30 V) DSS DS Enhancement
tpc8214-h.pdf
TPC8214-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8214-H High-Efficiency DCDC Converter Applications Unit: mmCCFL Inverters Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 2.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 130 m (typ.) High forward
tpc8218-h.pdf
TPC8218-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8218-H DC-DC Converter Applications Unit: mmCCFL Inverters Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 2.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 38 m (typ.) High forward transfer admittance: |Yfs| = 12 S (
tpc8211.pdf
TPC8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8211 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Low drain-source ON resistance: RDS (ON) = 25 m (typ.) High forward transfer admittance: |Y | = 7.0 S (typ.) fs Low leakage current: I = 10 A (max) (V = 30 V) DSS DS Enhancemen
tpc8216-h.pdf
TPC8216-H www.DataSheet4U.comTOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8216-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.4 nC (typ.) Low drain-source ON-resistance
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